Charged defect states in intrinsic hydrogenated amorphous silicon films

Mehmet Güneş; Christopher R. Wronski; T. J. McMahon

doi:10.1063/1.357645

Charged defect states in intrinsic hydrogenated amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.357645 ◽

1994 ◽

Vol 76 (4) ◽

pp. 2260-2263 ◽

Cited By ~ 40

Author(s):

Mehmet Güneş ◽

Christopher R. Wronski ◽

T. J. McMahon

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Charged Defect ◽

Defect States ◽

Hydrogenated Amorphous

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Effect of gamma irradiation on the shallow defect states of hydrogenated amorphous silicon films

The European Physical Journal Applied Physics ◽

10.1051/epjap/2010100276 ◽

2010 ◽

Vol 53 (1) ◽

pp. 10502

Author(s):

A. Yildiz ◽

N. Serin ◽

T. Serin

Keyword(s):

Gamma Irradiation ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Defect States ◽

Shallow Defect ◽

Hydrogenated Amorphous

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Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films

Journal of Applied Physics ◽

10.1063/1.365000 ◽

1997 ◽

Vol 81 (8) ◽

pp. 3526-3536 ◽

Cited By ~ 33

Author(s):

Mehmet Güneş ◽

Christopher R. Wronski

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Charged Defect ◽

Defect States ◽

Silicon Thin Films ◽

Staebler Wronski Effect ◽

Hydrogenated Amorphous ◽

Kinetics Of

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Investigation of intrinsic defect states in hydrogenated amorphous silicon films using steady-state photoconductivity and sub-bandgap absorption

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) ◽

10.1109/pvsc.1993.347104 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Gunes ◽

Y.M. Li ◽

R.M.A. Dawson ◽

C.M. Fortmann ◽

C.R. Wronski

Keyword(s):

Steady State ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Intrinsic Defect ◽

Defect States ◽

Hydrogenated Amorphous

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The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.347444 ◽

1991 ◽

Vol 69 (12) ◽

pp. 8320-8328 ◽

Cited By ~ 22

Author(s):

M. Kunst ◽

H.‐C. Neitzert

Keyword(s):

Amorphous Silicon ◽

Deposition Temperature ◽

Annealing Temperature ◽

Hydrogenated Amorphous Silicon ◽

Optoelectronic Properties ◽

Silicon Films ◽

Hydrogenated Amorphous

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Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

Applied Physics Letters ◽

10.1063/1.96129 ◽

1985 ◽

Vol 47 (4) ◽

pp. 412-414 ◽

Cited By ~ 144

Author(s):

C. E. Michelson ◽

A. V. Gelatos ◽

J. D. Cohen

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Drive Level ◽

Silicon Films ◽

State Densities ◽

Hydrogenated Amorphous ◽

Gap State

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Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.04es05 ◽

2016 ◽

Vol 55 (4S) ◽

pp. 04ES05 ◽

Cited By ~ 11

Author(s):

Junichi Seto ◽

Keisuke Ohdaira ◽

Hideki Matsumura

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Hydrogenated Amorphous

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Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2011.12.031 ◽

2012 ◽

Vol 358 (17) ◽

pp. 2035-2038 ◽

Cited By ~ 13

Author(s):

J. Holovský ◽

M. Schmid ◽

M. Stuckelberger ◽

M. Despeisse ◽

C. Ballif ◽

...

Keyword(s):

Amorphous Silicon ◽

Time Evolution ◽

Surface Defect ◽

Hydrogenated Amorphous Silicon ◽

Optical Simulation ◽

Defect States ◽

Photocurrent Spectroscopy ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon Films Prepared By rf Sputtering In He/H2

10.1117/12.938346 ◽

1986 ◽

Author(s):

M L. Albers ◽

H R. Shanks ◽

J Shinar

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Rf Sputtering ◽

Silicon Films ◽

Hydrogenated Amorphous

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Effects of silicon–hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582049 ◽

1999 ◽

Vol 17 (6) ◽

pp. 3240-3245 ◽

Cited By ~ 21

Author(s):

Hae-Yeol Kim ◽

Jae-Beom Choi ◽

Jai-Young Lee

Keyword(s):

Hydrogen Bond ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hydrogenated Amorphous ◽

Bond Characteristics

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Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00840-6 ◽

2000 ◽

Vol 266-269 ◽

pp. 304-308 ◽

Cited By ~ 2

Author(s):

Mehmet Güneş ◽

Robert E Johanson ◽

S.O Kasap

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Conductance Fluctuations ◽

Hydrogenated Amorphous ◽

Deposition Techniques

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