On the efficiency of combined ion implantation for the creation of near-surface nitrogen-vacancy centers in diamond

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Author(s):  
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Seyed Ali Momenzadeh ◽  
Denis Antonov ◽  
Helmut Fedder ◽  
Andrej Denisenko ◽  
...  
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R. W. de Gille ◽  
D. A. Broadway ◽  
T. Teraji ◽  
S. E. Lillie ◽  
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Andrew S. Greenspon ◽  
Kenichi Ohno ◽  
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pp. 2
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Seiichi Saiki ◽  
Shinobu Onoda ◽  
Yuta Masuyama ◽  
Hiroshi Abe ◽  
...  

Electron beam irradiation into type-Ib diamond is known as a good method for the creation of high concentration negatively-charged nitrogen-vacancy (NV−) centers by which highly sensitive quantum sensors can be fabricated. In order to understand the creation mechanism of NV− centers, we study the behavior of substitutional isolated nitrogen (P1 centers) and NV− centers in type-Ib diamond, with an initial P1 concentration of 40–80 ppm by electron beam irradiation up to 8.0 × 1018 electrons/cm2. P1 concentration and NV− concentration were measured using electron spin resonance and photoluminescence measurements. P1 center count decreases with increasing irradiation fluence up to 8.0 × 1018 electrons/cm2. The rate of decrease in P1 is slightly lower at irradiation fluence above 4.0 × 1018 electrons/cm2 especially for samples of low initial P1 concentration. Comparing concentration of P1 centers with that of NV− centers, it suggests that a part of P1 centers plays a role in the formation of other defects. The usefulness of electron beam irradiation to type-Ib diamonds was confirmed by the resultant conversion efficiency from P1 to NV− center around 12–19%.


2014 ◽  
Vol 105 (6) ◽  
pp. 063107 ◽  
Author(s):  
S. Sangtawesin ◽  
T. O. Brundage ◽  
Z. J. Atkins ◽  
J. R. Petta

2012 ◽  
Vol 29 (3) ◽  
pp. 036103 ◽  
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Xiang-Dong Chen ◽  
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Zhao-Jun Gong ◽  
Chong-Wen Zou ◽  
...  

2015 ◽  
Vol 115 (7) ◽  
Author(s):  
H. J. Mamin ◽  
M. H. Sherwood ◽  
M. Kim ◽  
C. T. Rettner ◽  
K. Ohno ◽  
...  

2020 ◽  
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Tokuyuki Teraji ◽  
Kohei M. Itoh ◽  
...  

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