scholarly journals Hydrogen concentration and mass density of diamondlike carbon films obtained by x‐ray and neutron reflectivity

1994 ◽  
Vol 76 (8) ◽  
pp. 4636-4642 ◽  
Author(s):  
E. Findeisen ◽  
R. Feidenhans’l ◽  
M. E. Vigild ◽  
K. N. Clausen ◽  
J. Bindslev Hansen ◽  
...  
2009 ◽  
Vol 48 (9) ◽  
pp. 092304 ◽  
Author(s):  
Susumu Takabayashi ◽  
Keishi Okamoto ◽  
Tatsuyuki Nakatani ◽  
Hiroyuki Sakaue ◽  
Takayuki Takahagi

2000 ◽  
Vol 14 (02n03) ◽  
pp. 181-187 ◽  
Author(s):  
B. K. Tay ◽  
X. Shi ◽  
S. P. Lau ◽  
Q. Zhang ◽  
H. C. Chua ◽  
...  

Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mixed ta-C:Si layer, Si-O layer and the silicon subtrate. The mixed ta-C:Si layer consisting of the mixture of ta-C and silicon simulates the carbon ion impinging / diffusion into the surface of the silicon substrate. The mass density and the roughness of the film are found to be dependent on the impinging ion bombardment energy. The mass density increases with increase in ion bombardment energy up to 100 eV. Beyond 100 eV, the mass density decreases with further increase in ion bombardment energy up to 100 eV. Beyond 100 EV, the mass density decreases with further increase in ion bombardment energy. The surface roughness decreases with increasing ion bambardment energy to a minimum value at 100 eV, after which it increases with further increase in ion bombardment energy. The thickness of the films obtained by XRR technique correlates well with the thickness measurement obtained by spectral reflectometry. The existence of the Si-O layer was verified by Auger depth profiling.


2008 ◽  
Vol 254 (9) ◽  
pp. 2666-2670 ◽  
Author(s):  
Susumu Takabayashi ◽  
Keishi Okamoto ◽  
Kunihiko Motomitsu ◽  
Akira Terayama ◽  
Tatsuyuki Nakatani ◽  
...  

2003 ◽  
Vol 18 (7) ◽  
pp. 1561-1565 ◽  
Author(s):  
Alex Minhua Chen ◽  
Charoendee Pingsuthiwong ◽  
Teresa Diane Golden

Diamondlike carbon (DLC) films were electrodeposited on nickel substrates from a solution of acetylene in liquid ammonia at low temperature and low potential using a three-electrode cell. Raman spectra showed a shoulder D peak at 1365 cm−1 and a broad G peak at 1558 cm−1 for the films, indicating an sp3 and sp2 carbon mixture. The presence of a 1230 cm−1 peak also indicated some four-fold-coordinated bonds of microcrystalline diamond. Fitting of the peaks in the Raman spectra specified the electrodeposited films were hydrogenated amorphous alloys, a-C:H. X-ray photoelectron spectra also pointed to the films containing a mixture of sp3 and sp2 carbon. Fourier transform infrared spectra of the electrodeposited films had C-H stretching vibrations, which is consistent with hydrogenated DLC films.


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