Surface potential determination in metal‐oxide‐semiconductor capacitors

J. M. Moragues; E. Ciantar; R. Jérisian; B. Sagnes; J. Oualid

doi:10.1063/1.357178

Surface potential determination in metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.357178 ◽

1994 ◽

Vol 76 (9) ◽

pp. 5278-5287 ◽

Cited By ~ 10

Author(s):

J. M. Moragues ◽

E. Ciantar ◽

R. Jérisian ◽

B. Sagnes ◽

J. Oualid

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Transactions on Electrical and Electronic Materials ◽

10.1007/s42341-020-00181-4 ◽

2020 ◽

Vol 21 (3) ◽

pp. 339-347 ◽

Cited By ~ 3

Author(s):

N. P. Maity ◽

Reshmi Maity ◽

Subir Dutta ◽

Subhasish Deb ◽

K. Girija Sravani ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Effect Transistor

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Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

International Journal of Electronics ◽

10.1080/00207210902977822 ◽

2009 ◽

Vol 96 (10) ◽

pp. 1023-1038

Author(s):

Sheng Chang ◽

Gaofeng Wang ◽

Qijun Huang ◽

Hao Wang

Keyword(s):

Analytical Solution ◽

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate

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The effect of surface potential fluctuations on surface photovoltage in metal‐oxide‐semiconductor structures

Journal of Applied Physics ◽

10.1063/1.329406 ◽

1981 ◽

Vol 52 (8) ◽

pp. 5399-5400 ◽

Cited By ~ 1

Author(s):

S. K. Krawczyk ◽

A. Jakubowski

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Photovoltage ◽

Potential Fluctuations ◽

Semiconductor Structures ◽

Effect Of Surface

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Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance

Journal of Applied Physics ◽

10.1063/1.3673572 ◽

2012 ◽

Vol 111 (1) ◽

pp. 014502 ◽

Cited By ~ 75

Author(s):

Hironori Yoshioka ◽

Takashi Nakamura ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Interface State ◽

State Density ◽

Metal Oxide Semiconductor ◽

Interface State Density ◽

Oxide Semiconductor ◽

Accurate Evaluation ◽

Semiconductor Structures

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Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/Al2O3/GaAs(100) metal-oxide-semiconductor structures

Physical Review B ◽

10.1103/physrevb.88.045322 ◽

2013 ◽

Vol 88 (4) ◽

Cited By ~ 9

Author(s):

Lee A. Walsh ◽

Greg Hughes ◽

Jun Lin ◽

Paul K. Hurley ◽

Terrance P. O’Regan ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Photoelectron Spectroscopy ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Semiconductor Structures ◽

Characterization Study

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Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2067 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2067-2072 ◽

Cited By ~ 14

Author(s):

Zhaomin Zhu ◽

Xing Zhou ◽

Karthik Chandrasekaran ◽

Subhash C. Rustagi ◽

Guan Huei See

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Compact Surface ◽

Oxide Semiconductor ◽

Double Gate

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A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2011.1893 ◽

2011 ◽

Vol 8 (9) ◽

pp. 1857-1862

Author(s):

Xukai Zhang ◽

Jin He ◽

Lining Zhang ◽

Jian Zhang ◽

Yong Ma ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Core Model ◽

Double Gate

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Dynamic current oscillations in a metal‐oxide‐semiconductor surface potential well

Journal of Applied Physics ◽

10.1063/1.343074 ◽

1989 ◽

Vol 65 (2) ◽

pp. 837-841 ◽

Cited By ~ 2

Author(s):

L. F. Lou

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Surface ◽

Potential Well ◽

Current Oscillations

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A surface potential model for tri-gate metal oxide semiconductor field effect transistor: Analysis below 10 nm channel length

Engineering Science and Technology an International Journal ◽

10.1016/j.jestch.2020.12.020 ◽

2021 ◽

Author(s):

Suparna Panchanan ◽

Reshmi Maity ◽

Srimanta Baishya ◽

Niladri Pratap Maity

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Field Effect Transistor ◽

Potential Model ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor

Russian Physics Journal ◽

10.1007/s11182-012-9721-9 ◽

2012 ◽

Vol 54 (10) ◽

pp. 1137-1144 ◽

Cited By ~ 5

Author(s):

V. I. Gaman

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Oxygen Adsorption ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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