Optimum design and preparation ofa‐Si/a‐Si/a‐SiGe triple‐junction solar cells

1994 ◽  
Vol 75 (1) ◽  
pp. 588-595 ◽  
Author(s):  
Zhongyang Xu ◽  
Xuecheng Zou ◽  
Xuemei Zhou ◽  
Bofang Zhao ◽  
Changan Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optimum Design ◽  
Triple Junction

32.3 percent efficient triple junction GaInP2/GaAs/Ge concentrator solar cells

2000 ◽  
Author(s):  
D. Lillington ◽  
H. Cotal ◽  
J. Ermer ◽  
D. Friedman ◽  
T. Moriarty ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

An optimum design of antireflection coating for spherical silicon solar cells

2006 ◽  
Vol 90 (1) ◽  
pp. 46-56 ◽  
Author(s):  
Takahiro Mizuta ◽  
Tomohiro Ikuta ◽  
Takashi Minemoto ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optimum Design ◽  
Antireflection Coating ◽  
Silicon Solar Cells

Solution-Processed Monolithic All-Perovskite Triple-Junction Solar Cells with Efficiency Exceeding 20%

2020 ◽  
Vol 5 (9) ◽  
pp. 2819-2826 ◽  
Author(s):  
Ke Xiao ◽  
Jin Wen ◽  
Qiaolei Han ◽  
Renxing Lin ◽  
Yuan Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Solution Processed

Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodes

2009 ◽  
Vol 41 (8) ◽  
pp. 605-612 ◽  
Author(s):  
J. W. Leem ◽  
Y. T. Lee ◽  
J. S. Yu
Keyword(s):  
Solar Cells ◽  
Optimum Design ◽  
Tunnel Diodes

POSS Polyimide Sealed Flexible Triple‐Junction GaAs Thin‐Film Solar Cells for Space Applications

2021 ◽  
pp. 2100603
Author(s):  
Min Qian ◽  
Xiaojun Mao ◽  
Min Wu ◽  
Zhangyi Cao ◽  
Qing Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Triple Junction ◽  
Thin Film Solar Cells ◽  
Space Applications

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

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