Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

2010 ◽  
Vol 96 (5) ◽  
pp. 053504 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Yun Ho Hong ◽  
Ji-Hwan Yang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Resistive Switching ◽  
Memory Device ◽  
Filament Formation ◽  
Conducting Filament ◽  
Resistive Switching Memory ◽  
Switching Memory

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability

Nanoscale ◽  
2017 ◽  
Vol 9 (18) ◽  
pp. 6010-6019 ◽  
Author(s):  
Tae Hyung Park ◽  
Hae Jin Kim ◽  
Woo Young Park ◽  
Soo Gil Kim ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conducting Filament ◽  
Resistive Switching Memory ◽  
Switching Memory
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