H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

2015 ◽  
Vol 117 (12) ◽  
pp. 124501 ◽  
Author(s):  
L. Goux ◽  
J. Y. Kim ◽  
B. Magyari-Kope ◽  
Y. Nishi ◽  
A. Redolfi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Cells ◽  
Filament Formation ◽  
Conductive Filament ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

2010 ◽  
Vol 107 (5) ◽  
pp. 054517 ◽  
Author(s):  
Herbert Schroeder ◽  
Victor V. Zhirnov ◽  
Ralph K. Cavin ◽  
Rainer Waser
Keyword(s):  
Resistive Switching ◽  
Memory Cells ◽  
Resistive Switching Memory ◽  
Switching Memory

Effect of Cu ions assisted conductive filament on resistive switching memory behaviors in ZnFe2O4-based devices

2017 ◽  
Vol 694 ◽  
pp. 464-470 ◽  
Author(s):  
Bai Sun ◽  
Xin Zhang ◽  
Guangdong Zhou ◽  
Chunming Zhang ◽  
Pingyuan Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Conductive Filament ◽  
Resistive Switching Memory ◽  
Cu Ions ◽  
Switching Memory

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

2013 ◽  
Vol 109 ◽  
pp. 75-78 ◽  
Author(s):  
S. Privitera ◽  
G. Bersuker ◽  
B. Butcher ◽  
A. Kalantarian ◽  
S. Lombardo ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Microscopy Study ◽  
Memory Devices ◽  
Conductive Filament ◽  
Resistive Switching Memory ◽  
Switching Memory

Conductive filament structure in HfO2 resistive switching memory devices

2015 ◽  
Vol 111 ◽  
pp. 161-165 ◽  
Author(s):  
S. Privitera ◽  
G. Bersuker ◽  
S. Lombardo ◽  
C. Bongiorno ◽  
D.C. Gilmer
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Conductive Filament ◽  
Resistive Switching Memory ◽  
Filament Structure ◽  
Switching Memory
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