Effects of the substrate bias on the formation of cubic boron nitride by inductively coupled plasma enhanced chemical vapor deposition

1994 ◽  
Vol 75 (3) ◽  
pp. 1330-1334 ◽  
Author(s):  
Takanori Ichiki ◽  
Toshihiro Momose ◽  
Toyonobu Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Substrate Bias ◽  
Inductively Coupled

Plasma-Enhanced Chemical Vapor Deposition of High Quality Cubic BN Films with an Intermediate Layer of Turbostratic BN Thinner than 3 nm

2002 ◽  
Vol 750 ◽  
Author(s):  
Hangsheng Yang ◽  
Chihiro Iwamoto ◽  
Toyonobu Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Inductively Coupled Plasma ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Amorphous Layer ◽  
Inductively Coupled ◽  
Si Substrates ◽  
Pre Treatment

ABSTRACTCubic boron nitride (cBN) thin films were deposited on silicon wafers by low-pressure inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD). By using special substrate pre-treatment processes including positive biasing treatment in H2 plasma or 1200 K pre-heating in H2 atmosphere followed by an N2 plasma treatment, turbostratic BN (tBN) intermediate layer was revealed to directly grow on Si substrates without an initial amorphous layer. The thickness of the tBN transition layer can be reduced to less than 3 nm.

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