Si3N4/Si/Ge/GaAs metal‐insulator‐semiconductor structures grown by in situ chemical vapor deposition

1994 ◽  
Vol 75 (3) ◽  
pp. 1826-1828 ◽  
Author(s):  
J. Reed ◽  
G. B. Gao ◽  
A. Bochkarev ◽  
H. Morkoç
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures

Interface properties of Si3N4/Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

1996 ◽  
Vol 448 ◽  
Author(s):  
D.G. Park ◽  
D. M. Diatezua ◽  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Molecular Beam ◽  
Surface States ◽  
Chemical Vapor ◽  
Conduction Band Edge ◽  
Mis Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
Field Excursion

AbstractWe present characteristics of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) interfaces grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) techniques . The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575°C and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575 °C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K suggests that the traps be within 60 meV of the conduction band edge of GaAs.

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