Simultaneous extraction of bulk lifetime and surface recombination velocities from free carrier absorption transients

1994 ◽  
Vol 75 (5) ◽  
pp. 2718-2720 ◽  
Author(s):  
Z. G. Ling ◽  
P. K. Ajmera ◽  
G. S. Kousik
Keyword(s):  
Surface Recombination ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Simultaneous Extraction ◽  
Carrier Absorption

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements

2013 ◽  
Vol 740-742 ◽  
pp. 465-468 ◽  
Author(s):  
Sethu Saveda Suvanam ◽  
M. Usman ◽  
K. Gulbinas ◽  
V. Grivickas ◽  
Anders Hallén
Keyword(s):  
Reference Sample ◽  
Surface Recombination ◽  
Free Carrier ◽  
New Method ◽  
Optical Data ◽  
Surface Recombination Velocity ◽  
Free Carrier Absorption ◽  
Interface Traps ◽  
Capacitance Voltage ◽  
Carrier Absorption

This paper aims to establish a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations are made on MOS test structures utilizing Al2O3and SiO2dielectrics on 4H-SiC. These devices are then exposed to various fluences of Ar+implantation and then measured by the new method utilizing optical free carrier absorption (FCA) technique to assess the interface traps. A program has been developed using MATLAB to extract surface recombination velocity (SRV) at the oxide/epi-layer interface from the optical data. Capacitance-voltage (CV) is done to extract the density of interface traps (Dit) and a comparison was made. It is observed that SiO2samples show a large rise of SRVs, from 0.5×104cm/s for a reference sample to 8×104cm/s for a fluence of 1×1012cm-2, whereas Al2O3samples show more stable SRV, changing from 3×104cm/s for the un-irradiated reference sample to 6×104cm/s for a fluence of 1×1012cm-2. A very similar trend is observed for Ditvalues extracted from CV measurements and it can therefore be concluded that the FCA method is a suitable technique for the interface characterization.

4-QAM OFDM Data Switching via Free Carrier Absorption in Si-Rich SiC Waveguide

2021 ◽  
Vol 27 (3) ◽  
pp. 1-11
Author(s):  
Yen-Wei Hsueh ◽  
Chih-Hsien Cheng ◽  
Cai-Syuan Fu ◽  
Huai-Yung Wang ◽  
Bo-Ji Huang ◽  
...  
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Data Switching

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
Sign in / Sign up

Export Citation Format

Share Document