scholarly journals Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption

2018 ◽  
Vol 67 (21) ◽  
pp. 217201
Author(s):  
Wang Qian ◽  
Liu Wei-Guo ◽  
Gong Lei ◽  
Wang Li-Guo ◽  
Li Ya-Qing
Keyword(s):  
Surface Recombination ◽  
Free Carrier ◽  
Surface Recombination Velocity ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Recombination Velocity

Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

2003 ◽  
Vol 83 (6) ◽  
pp. 1157-1159 ◽  
Author(s):  
R. Aleksiejūnas ◽  
M. Sūdžius ◽  
T. Malinauskas ◽  
J. Vaitkus ◽  
K. Jarašiūnas ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Surface Recombination ◽  
Free Carrier ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements

2013 ◽  
Vol 740-742 ◽  
pp. 465-468 ◽  
Author(s):  
Sethu Saveda Suvanam ◽  
M. Usman ◽  
K. Gulbinas ◽  
V. Grivickas ◽  
Anders Hallén
Keyword(s):  
Reference Sample ◽  
Surface Recombination ◽  
Free Carrier ◽  
New Method ◽  
Optical Data ◽  
Surface Recombination Velocity ◽  
Free Carrier Absorption ◽  
Interface Traps ◽  
Capacitance Voltage ◽  
Carrier Absorption

This paper aims to establish a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations are made on MOS test structures utilizing Al2O3and SiO2dielectrics on 4H-SiC. These devices are then exposed to various fluences of Ar+implantation and then measured by the new method utilizing optical free carrier absorption (FCA) technique to assess the interface traps. A program has been developed using MATLAB to extract surface recombination velocity (SRV) at the oxide/epi-layer interface from the optical data. Capacitance-voltage (CV) is done to extract the density of interface traps (Dit) and a comparison was made. It is observed that SiO2samples show a large rise of SRVs, from 0.5×104cm/s for a reference sample to 8×104cm/s for a fluence of 1×1012cm-2, whereas Al2O3samples show more stable SRV, changing from 3×104cm/s for the un-irradiated reference sample to 6×104cm/s for a fluence of 1×1012cm-2. A very similar trend is observed for Ditvalues extracted from CV measurements and it can therefore be concluded that the FCA method is a suitable technique for the interface characterization.

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

1980 ◽  
Vol 51 (5) ◽  
pp. 2659 ◽  
Author(s):  
W. Walukiewicz ◽  
J. Lagowski ◽  
L. Jastrzebski ◽  
P. Rava ◽  
M. Lichtensteiger ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Compensation Ratio ◽  
Carrier Absorption

Nitridation by NO Or N2O of Si-SiO2 Interfaces

1999 ◽  
Vol 567 ◽  
Author(s):  
A. P. Caricato ◽  
F. Cazzaniga ◽  
G. F. Cerofolini ◽  
B. Crivelli ◽  
M. L. Polignano ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Nature ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Oxide Surface ◽  
Complementary Information ◽  
X Ray ◽  
Recombination Velocity ◽  
Foreign Species

ABSTRACTX-ray photoelectron spectroscopy (XPS) and photocurrent measurements for the determination of surface recombination velocity provide complementary information on the structure of the Si-SiO2 interface, being sensitive to the chemical nature of foreign species at the interface the former, and to intrinsic defects the latter. The comparison of the XPS N(1s) peaks determined for the Si-Si0 2 interfaces nitrided in NO or N2O ambients is useful to identify the species responsible for the broadening of the peak. In fact, nitridation by NO is mainly responsible for the formation of Si3N moieties at the silicon surface in which silicon atoms are partially oxidized; while nitridation by N2O proceeds with the oxidation of Si – Si backbonds to Si – N bonds, thus resulting in the formation of N(Si(O-)3)3 groups embedded in the oxide. Surface recombination velocity by photocurrent measurements gives evidence that nitridation in N2O is associated with an appreciable co-oxidation, while nitridation in NO is mainly associated with the passivation of interface states. Furthermore N2O and NO nitridation are responsible for different morphologies of the nitrided layers.

Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio

1979 ◽  
Vol 50 (2) ◽  
pp. 899-908 ◽  
Author(s):  
W. Walukiewicz ◽  
L. Lagowski ◽  
L. Jastrzebski ◽  
M. Lichtensteiger ◽  
H. C. Gatos
Keyword(s):  
Electron Mobility ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Compensation Ratio ◽  
Carrier Absorption
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