Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon

1994 ◽  
Vol 75 (6) ◽  
pp. 2809-2817 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
H. M. van Pinxteren
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon

High Concentrations of Erbium In Crystal Silicon by Thermal Or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 301 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

ABSTRACTSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 × 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 × 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

High Concentrations of Erbium in Crystal Silicon by Thermal or Ion-Beam-Induced Epitaxy of Erbium-Implanted Amorphous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
J. S. Custer ◽  
A. Polman ◽  
E. Snoeks ◽  
G. N. van den Hoven
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Crystal Silicon ◽  
Epitaxial Crystallization ◽  
Amorphous Si ◽  
High Concentrations ◽  
Er Doped

AbstractSolid phase epitaxy and ion-beam-induced epitaxial crystallization of Er-doped amorphous Si are used to incorporate high concentrations of Er in crystal Si. During solid phase epitaxy, substantial segregation and trapping of Er is observed, with maximum Er concentrations trapped in single crystal Si of up to 2 x 1020 /cm3. Ion-beam-induced regrowth results in very little segregation, with Er concentrations of more than 5 X 1020 /cm3 achievable. Photoluminescence from the incorporated Er is observed.

scholarly journals Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers

2010 ◽  
Vol 108 (4) ◽  
pp. 044901 ◽  
Author(s):  
D. J. Pyke ◽  
J. C. McCallum ◽  
B. C. Johnson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Solid phase epitaxy of evaporated amorphous silicon films

1984 ◽  
Vol 45 (8) ◽  
pp. 874-876 ◽  
Author(s):  
M. Milosavljević ◽  
C. Jeynes ◽  
I. H. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Silicon Films ◽  
Solid Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document