Video detection and mixing performance of GaAs Schottky‐barrier diodes at 30 THz and comparison with metal‐insulator‐metal diodes

1994 ◽  
Vol 75 (8) ◽  
pp. 4243-4248 ◽  
Author(s):  
H.‐W. Hübers ◽  
G. W. Schwaab ◽  
H. P. Röser
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Metal Insulator ◽  
Mixing Performance ◽  
Metal Insulator Metal ◽  
Video Detection

Various Contrasts Identifiable From the Backside of a Chip by 1.3μm Laser Beam Scanning and Current Change Imaging

1996 ◽  
Author(s):  
K. Nikawa ◽  
S. Inoue
Keyword(s):  
Laser Beam ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Si Substrate ◽  
Beam Scanning ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Current Pass ◽  
Current Change ◽  
Laser Beam Scanning

Abstract We can identify various contrasts by scanning an 1.3 um laser beam from the backside of a chip and displaying current changes as brightness changes on a CRT, because the 1.3 um laser beam generates no OBIC signal and can penetrate P- Si substrate with little intensity degradation. The contrasts we have confirmed up to now are: (1) Current pass contrast at Al lines caused by OBIRCH, (2) Defect contrast at Al interconnects caused by OBIRCH, (3) Current pass contrast at a poly Si lines caused by OBIRCH, (4) Parasitic MIM (metal-insulator-metal) contrast caused by temperature dependence of MIM current, (5) Schottky-barrier contrast caused by internal photoemission.

Series resistance calculation for the Metal-Insulator-Semiconductor Schottky barrier diodes

1996 ◽  
Vol 62 (3) ◽  
pp. 269-273 ◽  
Author(s):  
M. Saλam ◽  
E. Ayyildiz ◽  
A. Gümüs ◽  
A. Türüt ◽  
H. Efeoλu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Series Resistance ◽  
Schottky Barrier Diodes ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
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