Simulation studies of current transport in metal–insulator–semiconductor Schottky barrier diodes

2007 ◽  
Vol 390 (1-2) ◽  
pp. 179-184 ◽  
Author(s):  
Subhash Chand ◽  
Saroj Bala
1996 ◽  
Vol 62 (3) ◽  
pp. 269-273 ◽  
Author(s):  
M. Saλam ◽  
E. Ayyildiz ◽  
A. Gümüs ◽  
A. Türüt ◽  
H. Efeoλu ◽  
...  

2020 ◽  
Vol 44 (19) ◽  
pp. 7708-7718 ◽  
Author(s):  
Marnadu Raj ◽  
Chandrasekaran Joseph ◽  
Maruthamuthu Subramanian ◽  
Vivek Perumalsamy ◽  
Vijayakumar Elayappan

Nanoporous:Sn–WO3 film based metal–insulator–semiconductor type Schottky diodes exhibit ultra-high responsivity with higher quantum efficiency and detectivity.


1996 ◽  
Vol 62 (3) ◽  
pp. 269-273 ◽  
Author(s):  
M. Sağlam ◽  
E. Ayyıldız ◽  
A. Gümüş ◽  
A. Türüt ◽  
H. Efeoğlu ◽  
...  

2012 ◽  
Vol 54 (9) ◽  
pp. 1751-1763 ◽  
Author(s):  
Sh. A. Mirsagatov ◽  
A. K. Uteniyazov ◽  
A. S. Achilov

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