Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

2011 ◽  
Vol 26 (6) ◽  
pp. 775-780
Author(s):  
Xiuhua Wang ◽  
Shanshan Chen ◽  
Wei Lin ◽  
Shuping Li ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Image Position

Abstract

scholarly journals Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN VIA Metalorganic Vapor-Phase Epitaxy (Movpe)

1999 ◽  
Vol 4 (S1) ◽  
pp. 118-123 ◽  
Author(s):  
Kazuyuki Tadatomo ◽  
Yoichiro Ohuchi ◽  
Hiroaki Okagawa ◽  
Hirotaka Itoh ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Smooth Surface ◽  
Xrd Analysis ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Mixture Ratio ◽  
Lateral Overgrowth ◽  
Ambient Gases ◽  
Image Position

Ambient gas effect on the epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE) on a MOVPE-grown GaN (0001) / sapphire (0001) substrate with a SiO2 stripe mask has been studied by means of field-emission scanning electron microscopy (SEM) and highresolution X-ray diffraction (XRD) analysis. Different ambient gases of nitrogen, hydrogen and their mixture (mixture ratio, hydrogen : nitrogen = 1 : 1) affect the lateral overgrowth rate, the surface morphology and the crystalline tilting of ELO-GaN layers. XRD revealed that the ELO-GaN layer on the SiO2 mask aligned along the <100> direction exhibited anisotropic crystalline tilting toward <110>. For ELO-GaN growth in nitrogen ambient, the growth rate of the (0001) facet decreases, the lateral overgrowth rate increases and the tilting of the ELO-GaN layer increases, while no smooth surface is obtained, in comparison with ELO-GaN growth in hydrogen ambient. For the mixture ambient, a smooth surface with a fast lateral overgrowth rate is achieved and the dislocation density is not more than 107 cm−2, which is comparable to that in hydrogen ambient.

Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP

1993 ◽  
Vol 48 (15) ◽  
pp. 11135-11143 ◽  
Author(s):  
R. Leonelli ◽  
C. A. Tran ◽  
J. L. Brebner ◽  
J. T. Graham ◽  
R. Tabti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 85 (11) ◽  
pp. 7682-7688 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Tetsuya Takeuchi ◽  
Christian Wetzel ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy

2004 ◽  
Vol 273 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
Hairong Yuan ◽  
Soo Jin Chua ◽  
Zhonglin Miao ◽  
Jianrong Dong ◽  
Yanjun Wang
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 6B) ◽  
pp. L697-L699 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Shigeo Yamaguchi ◽  
Hisaki Kato ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Ternary Alloys

Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy

1992 ◽  
Vol 60 (22) ◽  
pp. 2749-2751 ◽  
Author(s):  
E. C. Paloura ◽  
A. Ginoudi ◽  
G. Kiriakidis ◽  
N. Frangis ◽  
F. Scholz ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural properties of ZnSy Se1−yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

1997 ◽  
Vol 26 (6) ◽  
pp. 697-704 ◽  
Author(s):  
X. G. Zhang ◽  
S. Kalisetty ◽  
J. Robinson ◽  
G. Zhao ◽  
D. W. Parent ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural properties of ZnSySe1 − y/ZnSe/GaAs(0 0 1) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

1997 ◽  
Vol 174 (1-4) ◽  
pp. 726-732 ◽  
Author(s):  
X.G. Zhang ◽  
S. Kalisetty ◽  
J. Robinson ◽  
G. Zhao ◽  
D.W. Parent ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

The role of the V/III ratio in the growth and structural properties of metalorganic vapor phase epitaxy GaAs/Ge heterostructures

1995 ◽  
Vol 24 (11) ◽  
pp. 1723-1730 ◽  
Author(s):  
C. Pelosi ◽  
G. Attolini ◽  
C. Bocchi ◽  
P. Franzosi ◽  
C. Frigeri ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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