Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors

J. J. Gu; Y. Q. Wu; P. D. Ye

doi:10.1063/1.3553440

Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3553440 ◽

2011 ◽

Vol 109 (5) ◽

pp. 053709 ◽

Cited By ~ 21

Author(s):

J. J. Gu ◽

Y. Q. Wu ◽

P. D. Ye

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Mode

Download Full-text

Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Cited By ~ 3

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

Download Full-text

Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2633 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2633-2635 ◽

Cited By ~ 2

Author(s):

Mao-Chyuan Tang ◽

Yean-Kuen Fang ◽

Wen-Shiang Liao ◽

David C. Chen ◽

Chune-Sin Yeh ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carriers ◽

Rf Performances

Download Full-text

Comparison of junctionless and inversion-mode p-type metal-oxide-semiconductor field-effect transistors in presence of hole-phonon interactions

Journal of Applied Physics ◽

10.1063/1.4940959 ◽

2016 ◽

Vol 119 (4) ◽

pp. 044509

Author(s):

E. Dib ◽

H. Carrillo-Nuñez ◽

N. Cavassilas ◽

M. Bescond

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Mode ◽

P Type ◽

And Inversion

Download Full-text

A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838066 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3659-3664 ◽

Cited By ~ 5

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Junction Formation ◽

Elevated Source

Download Full-text

Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5437 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5437-5443 ◽

Cited By ~ 6

Author(s):

Hiroshi Goto ◽

Seiichiro Yamaguchi ◽

Christoph Jungemann

Keyword(s):

Metal Oxide ◽

Inverse Modeling ◽

Field Effect ◽

Field Effect Transistors ◽

Device Simulation ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Low-frequency noise in deep-submicron metal–oxide–semiconductor field-effect transistors

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20020332 ◽

2002 ◽

Vol 149 (1) ◽

pp. 23-31 ◽

Cited By ~ 26

Author(s):

Z. Çelik-Butler

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

Download Full-text

Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3106163 ◽

2009 ◽

Vol 105 (8) ◽

pp. 084505 ◽

Cited By ~ 9

Author(s):

Shoubin Xue ◽

Ru Huang ◽

Pengfei Wang ◽

Wenhua Wang ◽

Dake Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Proton Radiation ◽

Dc Characteristics ◽

Radiation Induced

Download Full-text

Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.5893 ◽

2001 ◽

Vol 40 (Part 1, No. 10) ◽

pp. 5893-5899

Author(s):

Hongxia Ren ◽

Yue Hao ◽

Lei Xue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1604452 ◽

2003 ◽

Vol 94 (7) ◽

pp. 4461-4469 ◽

Cited By ~ 31

Author(s):

N. B. Lukyanchikova ◽

M. V. Petrichuk ◽

N. Garbar ◽

A. Mercha ◽

E. Simoen ◽

...

Keyword(s):

Metal Oxide ◽

Valence Band ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

Download Full-text

Anomalous threshold voltage change by 2 MeV electron irradiation at 100 °C in deep submicron metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1711170 ◽

2004 ◽

Vol 84 (16) ◽

pp. 3088-3090 ◽

Cited By ~ 1

Author(s):

K. Hayama ◽

H. Ohyama ◽

E. Simoen ◽

J. M. Rafı́ ◽

A. Mercha ◽

...

Keyword(s):

Metal Oxide ◽

Electron Irradiation ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Voltage Change ◽

Anomalous Threshold

Download Full-text