scholarly journals Direct measurement of the band gap and Fermi level position at InN(112¯0)

2011 ◽  
Vol 98 (6) ◽  
pp. 062103 ◽  
Author(s):  
Ph. Ebert ◽  
S. Schaafhausen ◽  
A. Lenz ◽  
A. Sabitova ◽  
L. Ivanova ◽  
...  
2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.


1992 ◽  
Vol 262 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar ◽  
N. Balasubramanian ◽  
V. Premachandran

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.


2001 ◽  
Vol 693 ◽  
Author(s):  
Kimberly A. Rickert ◽  
Jong Kyu Kim ◽  
Jong-Lam Lee ◽  
Franz J. Himpsel ◽  
Arthur B. Ellis ◽  
...  

AbstractSynchrotron radiation-based x-ray photoemission spectroscopy was used to study the Fermi level position within the band gap for thin metal overlayers of Au, Ni, and Ti on n-GaN and p-GaN. The Fermi level position was determined with the measured Fermi edge of the metal on the sample in order to correct for the presence of non-equilibrium effects. There are two different behaviors observed for the three metals studied. For Au and Ti, the surface Fermi positions on n-GaN and p-GaN are roughly 0.5 eV apart within the band gap. For Ni, the n-GaN and p-GaN have a Schottky barrier that forms at the same place at the gap.


Author(s):  
Amin Alamdari ◽  
Ramin Karimzadeh

CrHZSM-5 was placed in an electric field with appropriate strength in a quartz packed bed reactor with CO2 as oxidant to analyze its catalytic activity. Olefin yield increases with decrease in band gap since lattice oxygen mobility increases by reducing band gap. Fermi level change at the catalyst surface affects the catalytic activity. One way to change Fermi level is use electric field. In high voltage electric field, energy band was curved, bending of the energy band promoted the activity and Fermi level position is increasing. The CCD experiments were carried out with Design-Expert 7.3 software to determine the interaction between four operating variables, namely: temperature, electrical current, gap distance and metal loading. The levels of the independent variables were: temperature (550-700 °C), electrical current (0-12 mA), gap distance (6-14 mm), metal loading (0.5-7.5 %wt.). The conversion of LPG (Liquefied petroleum gas) was greatly increased by weak and effective application of an electric field to the catalyst bed. The obtained results indicated that the maximum yield value (46.94%) can be achieved under 673.66 °C, input electrical current of 11.01 mA, gap distance of 6.55 mm and metal loading of 3.98 wt.%.


Author(s):  
Zhenya Wang ◽  
Hao Guo ◽  
De Ning ◽  
Xiaobai Ma ◽  
Lirong Zheng ◽  
...  
Keyword(s):  

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.


1998 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
J.-L. Perrossier ◽  
M. Mamor ◽  
F. Meyer ◽  
C. Frojdh ◽  
...  

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