Direct Measurement of the Temperature Coefficient of the Electron Quasi-Fermi Level in Dye-Sensitized Nanocrystalline Solar Cells Using a Titanium Sensor Electrode

2006 ◽  
Vol 110 (43) ◽  
pp. 21920-21923 ◽  
Author(s):  
K. Lobato ◽  
L. M. Peter
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Temperature Coefficient ◽  
Direct Measurement ◽  
Sensor Electrode ◽  
Dye Sensitized ◽  
Quasi Fermi Level

Enhanced Electron Transport in Dye-Sensitized Solar Cells Using Short ZnO Nanotips on A Mirco-textured Metal Anode

2009 ◽  
Vol 1211 ◽  
Author(s):  
Zhenzhen Yang ◽  
Tao Xu ◽  
Ulrich Welp ◽  
Wai Kwong Kwok
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
Fermi Level ◽  
Energy Gap ◽  
Dye Sensitized Solar Cells ◽  
Semiconductor Layer ◽  
Roughness Factor ◽  
Dye Sensitized ◽  
Quasi Fermi Level ◽  
Sensitized Solar Cells

AbstractMuch attention has been directed towards the enhancement of electron transport in dye-sensitized solar cells (DSSC) using one-dimensional nanoarchitectured semiconductors. However, the improvement resulting from these ordered 1-D nanostructured electrodes is often offset or diminished by the deterioration in other device parameters intrinsically associated with the use of these 1-D nanostrucutres, such as the two-sided effects of the length of the nanowires impacting the series resistance and roughness factor. In this work, we mitigate this problem by allocating part of the roughness factor to the collecting anode instead of imparting all the roughness factors onto the semiconductor layer. A microscopically rough Zn microtip array is used as an anode on which ZnO nanotips are grown to serve as the semiconductor component in a DSSC. For the same surface roughness factor, our Zn microtip/ZnO nanotip DSSC exhibits an enhanced fill factor compared to a corresponding planar anode supported ZnO nanowire DSSC. In addition, the open circuit voltage of the Zn-microtip|ZnO-nanotip DSSC is also enhanced due to a favorable band shift at the Zn-ZnO interface, which raises the quasi Fermi level of the semiconductor and consequently enlarges the energy gap between the quasi Fermi level of ZnO and the redox species. The overall improvement demonstrates a new fundamental approach to enhance the efficiency of dye-sensitized solar cells.

scholarly journals On the Relation between the Open‐Circuit Voltage and Quasi‐Fermi Level Splitting in Efficient Perovskite Solar Cells

2019 ◽  
Vol 9 (33) ◽  
pp. 1901631 ◽  
Author(s):  
Pietro Caprioglio ◽  
Martin Stolterfoht ◽  
Christian M. Wolff ◽  
Thomas Unold ◽  
Bernd Rech ◽  
...  
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Quasi Fermi Level ◽  
Level Splitting

scholarly journals Ion Movement Explains Huge V OC Increase despite Almost Unchanged Internal Quasi‐Fermi‐Level Splitting in Planar Perovskite Solar Cells

2021 ◽  
pp. 2001104
Author(s):  
Jan Herterich ◽  
Moritz Unmüssig ◽  
Georgios Loukeris ◽  
Markus Kohlstädt ◽  
Uli Würfel
Keyword(s):  
Solar Cells ◽  
Fermi Level ◽  
Perovskite Solar Cells ◽  
Ion Movement ◽  
Quasi Fermi Level ◽  
Level Splitting

Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells

2005 ◽  
Vol 87 (8) ◽  
pp. 083505 ◽  
Author(s):  
A. Luque ◽  
A. Martí ◽  
N. López ◽  
E. Antolín ◽  
E. Cánovas ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Fermi Level ◽  
Experimental Analysis ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Quasi Fermi Level

Effect of 4-tert-Butylpyridine on the Quasi-Fermi Level of Dye-Sensitized TiO2Films

2011 ◽  
Vol 4 (4) ◽  
pp. 042301 ◽  
Author(s):  
Shufang Zhang ◽  
Masatoshi Yanagida ◽  
Xudong Yang ◽  
Liyuan Han
Keyword(s):  
Fermi Level ◽  
Dye Sensitized ◽  
Quasi Fermi Level
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