Segregation tendencies of transition-metal dopants in wide band gap semiconductor nanowires

2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap ◽  
Semiconductor Nanowire ◽  
Fermi Level Position

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.

P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

2009 ◽  
Vol 10 (5) ◽  
pp. 932-938 ◽  
Author(s):  
Michael Kröger ◽  
Sami Hamwi ◽  
Jens Meyer ◽  
Thomas Riedl ◽  
Wolfgang Kowalsky ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Band Gap ◽  
Transition Metal Oxides ◽  
Molybdenum Trioxide ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

scholarly journals Development of low temperature technology for the growth of wide band gap semiconductor nanowires

2016 ◽  
Vol 3 (2) ◽  
pp. 470-485
Author(s):  
David Jishiashvili ◽  
◽  
Zeinab Shiolashvili ◽  
Archil Chirakadze ◽  
Alexander Jishiashvili ◽  
...  
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Wide Band ◽  
Semiconductor Nanowires ◽  
Wide Band Gap

BALLISTIC PHONON TRANSPORT THROUGH GAUSSIAN ACOUSTIC NANOCAVITIES

2011 ◽  
Vol 25 (19) ◽  
pp. 1631-1642 ◽  
Author(s):  
SHU-JUAN LI ◽  
GUI-FANG HUANG ◽  
YUAN CHEN ◽  
WEI-QING HUANG ◽  
WANGYU HU ◽  
...  
Keyword(s):  
Band Gap ◽  
Low Temperatures ◽  
Gaussian Function ◽  
Thermal Conductance ◽  
Wide Band ◽  
Phonon Transport ◽  
Transmission Spectra ◽  
Wide Band Gap ◽  
Semiconductor Nanowire ◽  
Ballistic Phonons

We investigate ballistic phonon transport through Gaussian acoustic nanocavities in a semiconductor nanowire at low temperatures. When the transverse widths of acoustic nanocavities takes a Gaussian function, it is found that wide band gap and resonant peaks appear in transmission spectra. The phonon-cavity confined modes exist as the number of the nanocavities is large. The phonon transmission and thermal conductance strongly depend on the number and length of nanocavities. The results suggest that the Gaussian acoustic nanocavities may be useful for controlling thermal conductance artificially and the design of phonon devices to manipulate ballistic phonons in nanophononics.

How Can the Intra-Shell Emissions of Rare Earth and Transition Metal Ions in Thin Films and Nanoparticles Be Stimulated?

2008 ◽  
Vol 140 ◽  
pp. 3-8
Author(s):  
M. Godlewski ◽  
S. Yatsunenko ◽  
A. Opalińska ◽  
Witold Łojkowski
Keyword(s):  
Thin Films ◽  
Energy Transfer ◽  
Rare Earth ◽  
Transition Metal ◽  
Band Gap ◽  
Wide Band ◽  
Transition Metal Ions ◽  
Light Sources ◽  
Wide Band Gap ◽  
New Generation

Nanoparticles of the wide band gap oxides doped with rare earth (RE) ions are prospective materials for application in optoelectronics as phosphors in a new generation of light sources. In this paper the mechanisms of the excitation of efficient 4f-4f intra-shell transitions in RE doped nanoparticles are discussed. These mechanisms either enhance the rate of host to impurity energy transfer or stimulate the intra-shell transitions of RE ions.

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