Scaling laws for diamond chemical‐vapor deposition. I. Diamond surface chemistry

1993 ◽  
Vol 74 (11) ◽  
pp. 6888-6894 ◽  
Author(s):  
D. G. Goodwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Vapor Deposition ◽  
Scaling Laws ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Diamond Chemical Vapor Deposition

Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition

2021 ◽  
Vol 21 (8) ◽  
pp. 4412-4417
Author(s):  
Jonggeon Lee ◽  
Taemyung Kwak ◽  
Geunho Yoo ◽  
Seongwoo Kim ◽  
Okhyun Nam
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Defect Density ◽  
Chemical Vapor ◽  
Atomic Force Microscope Image ◽  
Selective Etching ◽  
Diamond Surface ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

In this study, we demonstrated the defect-selective etching and epitaxy technique for defect reduction of a heteroepitaxial chemical vapor deposition (CVD) diamond substrate. First, an 8 nm layer of nickel was deposited on the diamond surface using an e-beam evaporator. Then, defect-selective etching was conducted through an in situ single process using microwave plasma chemical vapor deposition (MPCVD). After defect-selective etching, the diamond layer was overgrown by MPCVD. The defect density measured from the atomic force microscope image decreased from 3.27×108 to 2.02×108 cm−2. The first-order Raman peak of diamond shifted from 1340 to 1336 cm−1, and the full width at half maximum (FWHM) decreased from 9.66 to 7.66 cm−1. Through the defect-selective etching and epitaxy technique, it was confirmed that the compressive stress was reduced and the crystal quality improved.

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2018 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

scholarly journals Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride

2019 ◽  
Author(s):  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
Polla Rouf ◽  
Sean Barry ◽  
Lars Ojamäe ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Chemistry ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Group 13 ◽  
Gas Phase Chemistry ◽  
Device Applications ◽  
Phase Chemistry

Chemical vapor deposition (CVD) is one of the most important techniques for depositing thin films of the group 13 nitrides (13-Ns), AlN, GaN, InN and their alloys, for electronic device applications. The standard CVD chemistry for 13-Ns use ammonia as the nitrogen precursor, however, this gives an inefficient CVD chemistry forcing N/13 ratios of 100/1 or more. Here we investigate the hypothesis that replacing the N-H bonds in ammonia with weaker N-C bonds in methylamines will permit better CVD chemistry, allowing lower CVD temperatures and an improved N/13 ratio. Quantum chemical computations shows that while the methylamines have a more reactive gas phase chemistry, ammonia has a more reactive surface chemistry. CVD experiments using methylamines failed to deposit a continuous film, instead micrometer sized gallium droplets were deposited. This study shows that the nitrogen surface chemistry is most likely more important to consider than the gas phase chemistry when searching for better nitrogen precursors for 13-N CVD.

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