Accurate reconstruction of the density of states ina‐Si:H by constant photocurrent method and photothermal deflection spectroscopy

1993 ◽  
Vol 74 (6) ◽  
pp. 3956-3960 ◽  
Author(s):  
G. Amato ◽  
F. Giorgis
Keyword(s):  
Density Of States ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Accurate Reconstruction

Accurate Reconstruction of the Density of States in a-Si:H by Photothermal and Photoconductive Spectra.

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Amato ◽  
F. Giorgis ◽  
C. Manfredotti
Keyword(s):  
Iterative Method ◽  
Absorption Coefficient ◽  
Fermi Level ◽  
Density Of States ◽  
Localized States ◽  
Electronic Transitions ◽  
Photothermal Deflection Spectroscopy ◽  
Derivative Method ◽  
Photothermal Deflection ◽  
Made In

The distribution of occupied states in a-Si:H has been inferred by applying a new self- consisting iterative method to the absorption coefficient spectra. This procedure does not require any assumption about the localized states below the Fermi level, and provides a more accurate insight with respect to the simple derivative method. Numerical simulations have been made in order to probe the reliability of our method. The optical spectra have been obtained by means of Photothermal Deflection Spectroscopy (PDS) and Constant Photocurrent Method (CPM); the comparison between the results as obtained by the two techniques suggests that different sensitivities to electronic transitions are involved; this can be used to infer information about the unoccupied defects.

Determination of the Density of States on N-type Ptcdi-c13 Organic Thin-film Semiconductor

2012 ◽  
Vol 1435 ◽  
Author(s):  
J. Puigdollers ◽  
A. Marsal ◽  
S. Galindo ◽  
P. Carreras ◽  
C. Voz ◽  
...  
Keyword(s):  
Density Of States ◽  
Field Effect Transistors ◽  
Localized States ◽  
Optical Absorption Coefficient ◽  
Organic Thin Film ◽  
Channel Conductance ◽  
Spectroscopy Technique ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

ABSTRACTIn this paper we study the density of states in n-type N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide organic semiconductor using two different methods. The first one is based on the temperature dependence of the channel conductance in field-effect transistors. The second one is based on the subgap optical absorption coefficient measured using the Photothermal Deflection Spectroscopy technique. Both techniques allow estimating the distribution of localized states in the band gap of the semiconductor.

scholarly journals Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Porous Aluminum ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force ◽  
Photothermal Deflection ◽  
Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

Trace explosive detection using photothermal deflection spectroscopy

2008 ◽  
Vol 103 (9) ◽  
pp. 094906 ◽  
Author(s):  
Adam R. Krause ◽  
Charles Van Neste ◽  
Larry Senesac ◽  
Thomas Thundat ◽  
Eric Finot
Keyword(s):  
Explosive Detection ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

scholarly journals Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy

1991 ◽  
pp. 269-272
Author(s):  
J. Serra ◽  
J. Andreu ◽  
G. Sardin ◽  
C. Roch ◽  
J.M. Asensi ◽  
...  
Keyword(s):  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection
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