Determination of the Density of States on N-type Ptcdi-c13 Organic Thin-film Semiconductor

2012 ◽  
Vol 1435 ◽  
Author(s):  
J. Puigdollers ◽  
A. Marsal ◽  
S. Galindo ◽  
P. Carreras ◽  
C. Voz ◽  
...  
Keyword(s):  
Density Of States ◽  
Field Effect Transistors ◽  
Localized States ◽  
Optical Absorption Coefficient ◽  
Organic Thin Film ◽  
Channel Conductance ◽  
Spectroscopy Technique ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

ABSTRACTIn this paper we study the density of states in n-type N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide organic semiconductor using two different methods. The first one is based on the temperature dependence of the channel conductance in field-effect transistors. The second one is based on the subgap optical absorption coefficient measured using the Photothermal Deflection Spectroscopy technique. Both techniques allow estimating the distribution of localized states in the band gap of the semiconductor.

Accurate Reconstruction of the Density of States in a-Si:H by Photothermal and Photoconductive Spectra.

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Amato ◽  
F. Giorgis ◽  
C. Manfredotti
Keyword(s):  
Iterative Method ◽  
Absorption Coefficient ◽  
Fermi Level ◽  
Density Of States ◽  
Localized States ◽  
Electronic Transitions ◽  
Photothermal Deflection Spectroscopy ◽  
Derivative Method ◽  
Photothermal Deflection ◽  
Made In

The distribution of occupied states in a-Si:H has been inferred by applying a new self- consisting iterative method to the absorption coefficient spectra. This procedure does not require any assumption about the localized states below the Fermi level, and provides a more accurate insight with respect to the simple derivative method. Numerical simulations have been made in order to probe the reliability of our method. The optical spectra have been obtained by means of Photothermal Deflection Spectroscopy (PDS) and Constant Photocurrent Method (CPM); the comparison between the results as obtained by the two techniques suggests that different sensitivities to electronic transitions are involved; this can be used to infer information about the unoccupied defects.

Determination of the complex refractive indices of Titan haze analogs using photothermal deflection spectroscopy

Icarus ◽  
2009 ◽  
Vol 203 (2) ◽  
pp. 663-671 ◽  
Author(s):  
Véronique Vuitton ◽  
Buu N. Tran ◽  
Peter D. Persans ◽  
James P. Ferris
Keyword(s):  
Refractive Indices ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

Gated Nonlinear Transport in Organic Thin Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Behrang H. Hamadani ◽  
Douglas Natelson
Keyword(s):  
Field Effect Transistors ◽  
Organic Thin Film Transistors ◽  
Localized States ◽  
Nonlinear Transport ◽  
Organic Thin Film ◽  
Thermally Activated ◽  
Density Of Localized States ◽  
Highly Nonlinear ◽  
Channel Lengths ◽  
Energy Dependent

AbstractCharge transport in poly(3-hexylthiophene) field effect transistors has been studied in a series of devices with channel lengths ranging from 3 μm down to 200 nm over a broad range of temperatures and gate voltages. We report gate-modulated highly nonlinear transport at temperatures below ∼200 K that is consistent in form with a Poole-Frenkel-like hopping mechanism in the space charge limited current regime. There is also consistency between this behavior and the hypothesis that density of localized states is strongly energy dependent. We also observe what appears to be a crossover from thermally activated to nonthermal hopping below 30 K.

Determination of thermal diffusivity of a solid surface by photothermal deflection spectroscopy

1987 ◽  
Vol 18 (3) ◽  
pp. 277-286
Author(s):  
G. Suber ◽  
M. Bertolotti ◽  
A. Ferrari ◽  
C. Sibilia ◽  
F. Ricciardiello
Keyword(s):  
Thermal Diffusivity ◽  
Solid Surface ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection
Sign in / Sign up

Export Citation Format

Share Document