Degradation of oxides in metal‐oxide‐semiconductor capacitors under high‐field stress

1993 ◽  
Vol 74 (7) ◽  
pp. 4598-4607 ◽  
Author(s):  
R. M. Patrikar ◽  
R. Lal ◽  
J. Vasi
Keyword(s):  
Metal Oxide ◽  
High Field ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Field Stress

High-field Fowler - Nordheim stress of n-type silicon carbide metal-oxide-semiconductor capacitors

1997 ◽  
Vol 12 (5) ◽  
pp. 525-528 ◽  
Author(s):  
E Bano ◽  
T Ouisse ◽  
C Leonhard ◽  
A Gölz ◽  
E G Stein von Kamienski
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
High Field ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Type Silicon

Study of Spatial and Energetical Behavior of Slow Si-SiO2 Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress

1987 ◽  
Vol 105 ◽  
Author(s):  
D. Vuillaume ◽  
H. Lakhdari ◽  
J. C. Bourgoin ◽  
R. Bouchakour ◽  
M. Jourdain
Keyword(s):  
Metal Oxide ◽  
High Field ◽  
Strong Dependence ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Substrate ◽  
Mos Structure ◽  
The Creation ◽  
Kinetics Of

AbstractWe study the behavior of the spatial and energetical distribution of the slow Si-SiO2 interface states ( i.e. the defects located in the strained SiO2 layer near the interface) when the Metal-oxide-semiconductor (MOS) structure is submitted to a high field electrons injection from the Si substrate. We have analysed the creation kinetics of these slow states in order to compare with the behavior of the fast interface states which are better studied. We demonstrate that the fast interface states are more rapidly generated than the slow states and that the creation kinetics of fast states reach a saturation at lower injected charge. We also find that the fast interface states generation is independent from the energetical location of the states in the Si bandgap. For the generation of slow states, we observe a weak dependence on the energetical location of the defects in the SiO2 bandgap, and a strong dependence on the depth location from the Si-SiO2 interface.

Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

1993 ◽  
Vol 74 (2) ◽  
pp. 1124-1130 ◽  
Author(s):  
Abdelillah El‐Hdiy ◽  
Guy Salace ◽  
Christian Petit ◽  
Marc Jourdain ◽  
Dominique Vuillaume
Keyword(s):  
Electric Field ◽  
Metal Oxide ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
High Electric Field ◽  
Oxide Semiconductor ◽  
Field Stress ◽  
Thin Gate Oxide
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