Time-resolved photoluminescence studies of GaN, InGaN, and AlGaN grown by metalorganic chemical vapor deposition

Mapping Intimacies ◽

10.1117/12.349308 ◽

1999 ◽

Cited By ~ 2

Author(s):

Yong-Hoon Cho ◽

Gordon H. Gainer ◽

Jin-Joo Song ◽

Sarah L. Keller ◽

Umesh K. Mishra ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Time Resolved ◽

Photoluminescence Studies ◽

Time Resolved Photoluminescence ◽

Metalorganic Chemical

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Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00692-8 ◽

2000 ◽

Vol 221 (1-4) ◽

pp. 240-245 ◽

Cited By ~ 1

Author(s):

Ho Ki Kwon ◽

C.J Eiting ◽

D.J.H Lambert ◽

M.M Wong ◽

B.S Shelton ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Time Resolved ◽

Photoluminescence Study ◽

Time Resolved Photoluminescence ◽

Metalorganic Chemical

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Time-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition

Defect Recognition and Image Processing in Semiconductors 1997 ◽

10.1201/9781315140810-71 ◽

2017 ◽

pp. 351-354

Author(s):

I. Tiginyanu ◽

D. Pavlidis ◽

J. Cao ◽

A. Eisenbach ◽

V. Ichizli ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Time Resolved ◽

Time Resolved Photoluminescence ◽

Metalorganic Chemical

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Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition

10.1117/12.757818 ◽

2007 ◽

Author(s):

Jinshe Yuan ◽

Mingyue Wang ◽

Guohao Yu

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Single Quantum ◽

Single Quantum Well ◽

Time Resolved ◽

Time Resolved Photoluminescence ◽

Metalorganic Chemical

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Photoluminescence studies in CuAlSe2epilayers grown by low‐pressure metalorganic chemical‐vapor deposition

Journal of Applied Physics ◽

10.1063/1.358990 ◽

1995 ◽

Vol 77 (3) ◽

pp. 1225-1232 ◽

Cited By ~ 25

Author(s):

S. Chichibu ◽

S. Shirakata ◽

S. Isomura ◽

Y. Harada ◽

M. Uchida ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1350421 ◽

2001 ◽

Vol 78 (8) ◽

pp. 1062-1064 ◽

Cited By ~ 11

Author(s):

G. Pozina ◽

N. V. Edwards ◽

J. P. Bergman ◽

T. Paskova ◽

B. Monemar ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Time Resolved ◽

Time Resolved Spectroscopy ◽

Metalorganic Chemical

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Carrier trapping in room‐temperature, time‐resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.95636 ◽

1985 ◽

Vol 46 (4) ◽

pp. 374-376 ◽

Cited By ~ 18

Author(s):

J. E. Fouquet ◽

A. E. Siegman ◽

R. D. Burnham ◽

T. L. Paoli

Keyword(s):

Vapor Deposition ◽

Room Temperature ◽

Metalorganic Chemical Vapor Deposition ◽

Multiple Quantum Well ◽

Chemical Vapor ◽

Multiple Quantum ◽

Time Resolved ◽

Time Resolved Photoluminescence ◽

Temperature Time ◽

Metalorganic Chemical

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Deep‐level photoluminescence studies on Si‐doped, metalorganic chemical vapor deposition grown AlxGa1−xAs

Journal of Applied Physics ◽

10.1063/1.348547 ◽

1991 ◽

Vol 69 (5) ◽

pp. 3266-3277 ◽

Cited By ~ 27

Author(s):

E. P. Visser ◽

X. Tang ◽

R. W. Wieleman ◽

L. J. Giling

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Deep Level ◽

Chemical Vapor ◽

Si Doped ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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Photoluminescence studies of stress relief in selectively grown GaAs on Si by metalorganic chemical vapor deposition

Solid State Communications ◽

10.1016/0038-1098(90)90842-y ◽

1990 ◽

Vol 76 (3) ◽

pp. 303-306 ◽

Cited By ~ 8

Author(s):

E.H. Lingunis ◽

N.M. Haegel ◽

N.H. Karam

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Stress Relief ◽

Gaas On Si ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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Photoluminescence Studies of Hydrogen-Passivated Al0.13Ga0.87As Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l796 ◽

1999 ◽

Vol 38 (Part 2, No. 7B) ◽

pp. L796-L798 ◽

Cited By ~ 1

Author(s):

Gang Wang ◽

Takashi Ogawa ◽

Kiyosi Ohtsuka ◽

Guang Yuan Zhao ◽

Tetsuo Soga ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Si Substrate ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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Photoluminescence studies on InGaAlP layers grown by low-pressure metalorganic chemical vapor deposition

Journal of Electronic Materials ◽

10.1007/bf02654539 ◽

1991 ◽

Vol 20 (9) ◽

pp. 687-690 ◽

Cited By ~ 17

Author(s):

S. Naritsuka ◽

Y. Nishikawa ◽

H. Sugawara ◽

M. Ishikawa ◽

Y. Kokubun

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Photoluminescence Studies ◽

Metalorganic Chemical

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