Correlation of room temperature photoluminescence to structural properties of ZnSSe/ZnSe superlattices grown by metalorganic vapor phase epitaxy

1993 ◽  
Vol 74 (9) ◽  
pp. 5880-5882 ◽  
Author(s):  
M. Heuken ◽  
M. Scholl ◽  
A. Schneider ◽  
J. Söllner ◽  
J. Woitok
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence

Optical and structural properties of metalorganic-vapor-phase-epitaxy-grown InAs quantum wells and quantum dots in InP

1993 ◽  
Vol 48 (15) ◽  
pp. 11135-11143 ◽  
Author(s):  
R. Leonelli ◽  
C. A. Tran ◽  
J. L. Brebner ◽  
J. T. Graham ◽  
R. Tabti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy

2011 ◽  
Vol 26 (6) ◽  
pp. 775-780
Author(s):  
Xiuhua Wang ◽  
Shanshan Chen ◽  
Wei Lin ◽  
Shuping Li ◽  
Hangyang Chen ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Image Position

Abstract

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 85 (11) ◽  
pp. 7682-7688 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Tetsuya Takeuchi ◽  
Christian Wetzel ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy

2004 ◽  
Vol 273 (1-2) ◽  
pp. 63-67 ◽  
Author(s):  
Hairong Yuan ◽  
Soo Jin Chua ◽  
Zhonglin Miao ◽  
Jianrong Dong ◽  
Yanjun Wang
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

scholarly journals The Formation of in-rich Regions at The Perphery of The Inverted Hexahonal Pits of InGaN thin-films Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 675-681
Author(s):  
P. Li ◽  
S. J. Chua ◽  
M. Hao ◽  
W. Wang ◽  
X. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Sem Images ◽  
Scanning Electron

InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 37 (Part 2, No. 6B) ◽  
pp. L697-L699 ◽  
Author(s):  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Shigeo Yamaguchi ◽  
Hisaki Kato ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Ternary Alloys

Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor‐phase epitaxy

1992 ◽  
Vol 60 (22) ◽  
pp. 2749-2751 ◽  
Author(s):  
E. C. Paloura ◽  
A. Ginoudi ◽  
G. Kiriakidis ◽  
N. Frangis ◽  
F. Scholz ◽  
...  
Keyword(s):  
Structural Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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