Room-temperature near-band-edge photoluminescence from CuInSe2 heteroepitaxial layers grown by metalorganic vapor phase epitaxy

1997 ◽  
Vol 70 (14) ◽  
pp. 1840-1842 ◽  
Author(s):  
Shigefusa Chichibu
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge ◽  
Heteroepitaxial Layers

scholarly journals The Formation of in-rich Regions at The Perphery of The Inverted Hexahonal Pits of InGaN thin-films Grown by Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 675-681
Author(s):  
P. Li ◽  
S. J. Chua ◽  
M. Hao ◽  
W. Wang ◽  
X. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Sem Images ◽  
Scanning Electron

InGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

The Formation of In-Rich Regions at the Perphery of the Inverted Hexahonal Pits of Ingan Thin-Films Grown by Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Li ◽  
S. J. Chua ◽  
M. Hao ◽  
W. Wang ◽  
X. Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Sem Images ◽  
Scanning Electron

AbstractInGaN thin films were grown by low-pressure metalorganic-vapor-phase-epitaxy (MOVPE) and characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). SEM images showed that InGaN samples have inverted hexagonal pits which are formed by the In segregation on the (1011) surfaces. Room temperature CL at the wavelengths corresponding to the GaN band edge, the In-poor and In-rich regions showed that the In–rich regions formed at the periphery of the hexagonal pits.

Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy

2006 ◽  
Author(s):  
Yasuyuki Kobayashi ◽  
Hiroki Hibino ◽  
Tomohiro Nakamura ◽  
Tetsuya Akasaka ◽  
Toshiki Makimoto ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Hexagonal Boron Nitride ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Heteroepitaxial Layers

Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy

2003 ◽  
Vol 83 (10) ◽  
pp. 1921-1922 ◽  
Author(s):  
R. P. Green ◽  
A. Krysa ◽  
J. S. Roberts ◽  
D. G. Revin ◽  
L. R. Wilson ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Cascade Lasers ◽  
Room Temperature Operation

In Situ Surface Passivation of GaAs by Thermal Nitridation using Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 573 ◽  
Author(s):  
Jingxi Sun ◽  
F. J. Himpsel ◽  
A. B. Ellis ◽  
T. F. Kuech
Keyword(s):  
Fermi Level ◽  
Vapor Phase ◽  
Surface Passivation ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Thermal Nitridation ◽  
Surface Fermi Level

ABSTRACTAn ammonia-based, in situ passivation of GaAs surfaces conducted within a metalorganic vapor phase epitaxy reactor is present. The shift of the GaAs surface Fermi level, and hence the surface charge density, resulting from this in situ passivation, has been studied using photoreflectance (PR) spectroscopy. Samples consisting of an undoped GaAs layer on highly doped n-GaAs (UN+) and p-GaAs (UP+) structures allow for the exact determination of the surface Fermi level position using PR These structures were grown by MOVPE and in situ thermal nitridation was performed after growth within the MOVPE system without exposure to the air. After nitridation, the surface Fermi level can be shifted by ∼ 0.23 eV towards the conduction band edge for UN+ structures and by ∼ 0.11 eV towards the valence band edge for UP+ structures from the normally mid-gap ‘pinned’ positions.

Room temperature operating InAsSb-based photovoltaic infrared sensors grown by metalorganic vapor phase epitaxy

2017 ◽  
Vol 464 ◽  
pp. 211-214 ◽  
Author(s):  
Ryosuke Hasegawa ◽  
Akira Yoshikawa ◽  
Tomohiro Morishita ◽  
Yoshitaka Moriyasu ◽  
Kazuhiro Nagase ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Infrared Sensors ◽  
Temperature Operating
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