scholarly journals Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2×1) by femtosecond laser excitation

2011 ◽  
Vol 98 (1) ◽  
pp. 013108 ◽  
Author(s):  
Ali Oguz Er ◽  
Wei Ren ◽  
Hani E. Elsayed-Ali
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Femtosecond Laser ◽  
Epitaxial Growth ◽  
Laser Excitation ◽  
Ge Quantum Dot

Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation

2018 ◽  
Vol 648 ◽  
pp. 46-49 ◽  
Author(s):  
Cyril P. Sadia ◽  
Lorenzo P. Lopez ◽  
Ramon M. delos Santos ◽  
Joselito E. Muldera ◽  
Alexander E. De Los Reyes ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Epitaxial Growth ◽  
Laser Excitation ◽  
Terahertz Emission

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb

1994 ◽  
Vol 143 (1-2) ◽  
pp. 15-21 ◽  
Author(s):  
J. Shin ◽  
A. Verma ◽  
G.B. Stringfellow ◽  
R.W. Gedridge
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

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