Simultaneous gettering and emitter formation in multicrystalline-Si wafers by annealing phosphorus doped amorphous silicon compounds

2011 ◽  
Vol 98 (2) ◽  
pp. 022102 ◽  
Author(s):  
Rafel Ferré ◽  
Isidro Martín ◽  
Roland Trassl ◽  
Ramon Alcubilla ◽  
Rolf Brendel
Keyword(s):  
Amorphous Silicon ◽  
Silicon Compounds ◽  
Phosphorus Doped

scholarly journals Defect Frozen Phenomena in Phosphorus-Doped Hydrogenated Amorphous Silicon

1989 ◽  
Vol 97 (1127) ◽  
pp. 699-705
Author(s):  
Yukio OSAKA ◽  
Hiroyuki NASU ◽  
Chikashi AKAMATSU ◽  
Ryo HAYASHI
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

Planar and Perpendicular Conductivity of Doping Modulated Amorphous Silicon Multilayers

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Steemers ◽  
I. Chen ◽  
J. Mort ◽  
F. Jansen ◽  
M. Morgan ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Space Charge ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Critical Value ◽  
Dark Conductivity ◽  
Charge Doping ◽  
Phosphorus Doped

ABSTRACTThe conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge doping in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value

Alternative phosphorus-doped amorphous silicon using trimethylphosphine diluted in hydrogen

2003 ◽  
Vol 427 (1-2) ◽  
pp. 270-273 ◽  
Author(s):  
R. Terasa ◽  
M. Albert ◽  
J.W. Bartha ◽  
T. Roessler ◽  
A.S. Abramov ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Phosphorus Doped

scholarly journals The structure of boron- and phosphorus-doped amorphous silicon thin films

1987 ◽  
Vol 43 (a1) ◽  
pp. C136-C136 ◽  
Author(s):  
D. R. McKenzie ◽  
D. J. B. Cockayne ◽  
Z. Liu ◽  
D. M. Dwarte ◽  
S. A. Song
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Optimisation of a plasmonic parallel waveguide sensor based on amorphous silicon compounds

2020 ◽  
Author(s):  
João Costa ◽  
Alessandro Fantoni ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
Silicon Compounds ◽  
Waveguide Sensor
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