Evidence for the hydrogen-glass model of metastability annealing in phosphorus-doped amorphous silicon

1993 ◽  
Vol 48 (23) ◽  
pp. 17114-17120 ◽  
Author(s):  
Howard M. Branz ◽  
Eugene Iwaniczko
Keyword(s):  
Amorphous Silicon ◽  
Glass Model ◽  
Phosphorus Doped

scholarly journals Defect Frozen Phenomena in Phosphorus-Doped Hydrogenated Amorphous Silicon

1989 ◽  
Vol 97 (1127) ◽  
pp. 699-705
Author(s):  
Yukio OSAKA ◽  
Hiroyuki NASU ◽  
Chikashi AKAMATSU ◽  
Ryo HAYASHI
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

Planar and Perpendicular Conductivity of Doping Modulated Amorphous Silicon Multilayers

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Steemers ◽  
I. Chen ◽  
J. Mort ◽  
F. Jansen ◽  
M. Morgan ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Space Charge ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Critical Value ◽  
Dark Conductivity ◽  
Charge Doping ◽  
Phosphorus Doped

ABSTRACTThe conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge doping in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value

Alternative phosphorus-doped amorphous silicon using trimethylphosphine diluted in hydrogen

2003 ◽  
Vol 427 (1-2) ◽  
pp. 270-273 ◽  
Author(s):  
R. Terasa ◽  
M. Albert ◽  
J.W. Bartha ◽  
T. Roessler ◽  
A.S. Abramov ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Phosphorus Doped

scholarly journals The structure of boron- and phosphorus-doped amorphous silicon thin films

1987 ◽  
Vol 43 (a1) ◽  
pp. C136-C136 ◽  
Author(s):  
D. R. McKenzie ◽  
D. J. B. Cockayne ◽  
Z. Liu ◽  
D. M. Dwarte ◽  
S. A. Song
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Effect of Residual Phosphorus on Amorphous Silicon Thin Film Transistors

1990 ◽  
Vol 192 ◽  
Author(s):  
Hiroshi Tsutsu ◽  
Tetsuya Kawamura ◽  
Yutaka Miyata
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Residual Phosphorus ◽  
Order Of Magnitude ◽  
Phosphorus Doped ◽  
Secondary Ion ◽  
Channel Region

ABSTRACTEffects of residual phosphorus in the channel region of amorphous silicon thin film transistors(a-Si TFTs) on the TFT characteristics were quantitatively investigated. Concentration and the depth profile of the residual phosphorus were measured by high resolution secondary ion mass spectroscopy(SIMS). The OFF characteristics of a-Si TFTs were also measured.The SIMS data showed that the phosphorus exists about 100nm deep into intrinsic a-Si(i-a-Si), but the OFF characteristics showed that the activity of the residual phosphorus is 4 order of magnitude lower than that of heavily phosphorus doped a-Si(+-a-Si). The residual phosphorus is found to be inactive and stable, and has little effect on a-Si TFT characteristics.These results enabled us to fabricate inverted staggered a-Si TFTs by the simplest process using only 2 photo-mask steps and 1 self-aligned exposure.

Schottky barriers on phosphorus-doped hydrogenated amorphous silicon: The effects of tunneling

1986 ◽  
Vol 33 (10) ◽  
pp. 6936-6945 ◽  
Author(s):  
W. B. Jackson ◽  
R. J. Nemanich ◽  
M. J. Thompson ◽  
B. Wacker
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barriers ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous
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