Planar and Perpendicular Conductivity of Doping Modulated Amorphous Silicon Multilayers

1986 ◽  
Vol 70 ◽  
Author(s):  
H. Steemers ◽  
I. Chen ◽  
J. Mort ◽  
F. Jansen ◽  
M. Morgan ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Space Charge ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Critical Value ◽  
Dark Conductivity ◽  
Charge Doping ◽  
Phosphorus Doped

ABSTRACTThe conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge doping in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value

Parallel Conduction in a-Si:H/a-Si1−xCx:H Multilayers

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Bertomeu ◽  
J. Puigdollers ◽  
J.M. Asensi ◽  
J.C. Delgado ◽  
J. Andreu
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Dark Conductivity ◽  
Silicon Carbon ◽  
Parallel Conduction ◽  
In Series ◽  
Parallel Direction ◽  
Alloy Effect

This paper deals with the electrical properties in the parallel direction of compositionally modulated amorphous silicon/amorphous silicon-carbon multilayers. Conductivity of three series of samples with varying well and barrier thicknesses is studied. The results show that dark conductivity decreases when reducing a-Si:H layer thickness. This is interpreted as an alloy effect at interfaces. The role of the a-Si1-xCx:H layers in the photoconductivity decrease observed in series with variable mean composition and constant well thickness is discussed

Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution

1991 ◽  
Vol 219 ◽  
Author(s):  
Muzhi He ◽  
Guang H. Lin ◽  
J. O'M. Bockris
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Selenium Concentration ◽  
Alloy Film ◽  
Dark Conductivity ◽  
Flow Rate Ratio ◽  
Selenium Atom ◽  
Alloy Films ◽  
Hydrogen Dilution ◽  
Photo Response

ABSTRACTAmorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.

Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments

2012 ◽  
Vol 358 (17) ◽  
pp. 2007-2010 ◽  
Author(s):  
O.A. Maslova ◽  
M.E. Gueunier-Farret ◽  
J. Alvarez ◽  
A.S. Gudovskikh ◽  
E.I. Terukov ◽  
...  
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Schottky Diodes ◽  
Modeling And Experiments ◽  
Capacitance Spectroscopy ◽  
Charge Capacitance

scholarly journals Defect Frozen Phenomena in Phosphorus-Doped Hydrogenated Amorphous Silicon

1989 ◽  
Vol 97 (1127) ◽  
pp. 699-705
Author(s):  
Yukio OSAKA ◽  
Hiroyuki NASU ◽  
Chikashi AKAMATSU ◽  
Ryo HAYASHI
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous

Residual Stress Effect on Performance of Diaphragm-Based MEMS Pressure Transducers

2000 ◽  
Author(s):  
Meng-Nian Niu ◽  
Eun Sok Kim
Keyword(s):  
Residual Stress ◽  
Theoretical Analysis ◽  
Layer Thickness ◽  
Compressive Residual Stress ◽  
Stress Effect ◽  
Layer By Layer ◽  
Pressure Transducers ◽  
Before And After ◽  
Supporting Layer ◽  
Residual Stress Effect

Abstract We experimentally and theoretically confirm that residual stress within a diaphragm is critical in limiting the performance of diaphragm-based piezoelectric microphones even if the stress is low (around 50 MPa). We have fabricated and studied microphones with Al/parylene/ZnO/SiN2/poly-Si/SiN1 (from top to bottom) diaphragm. As the SiN1 supporting layer is removed layer by layer from the backside with CF4 plasma (in an RIE system), we measure both the sensitivity and center displacement of the microphone before and after each RIE etching of the SiN1 from the microphone diaphragm, and find the sensitivity increasing about 5–16 times with the best sensitivity reaching 11 μV/μbar from a mere 0.6 μV/μbar. The center displacement increases very moderately as the SiN1 layer thickness decreases from 0.8 to 0.2 μm. However, the center displacement starts to increase greatly as the SiN1 layer thickness goes below 0.2 μm, which compares with our theoretical analysis well. In the case of the SiN1 layer having compressive residual stress, the compressive stress can enhance the microphone sensitivity and center displacement to a certain extent.

scholarly journals Structure and Optical Properties of Co-Sputtered Amorphous Silicon Tin Alloy Films for NIR-II Region Sensor

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4076
Author(s):  
Xiang-Dong Jiang ◽  
Ming-Cheng Li ◽  
Rui-Kang Guo ◽  
Ji-Min Wang
Keyword(s):  
Amorphous Silicon ◽  
Deposition Temperature ◽  
Near Infrared ◽  
Dark Conductivity ◽  
Linear Variation ◽  
Sensitive Layer ◽  
Tem Analysis ◽  
Alloy Films ◽  
Non Invasive ◽  
Xrd And Tem

Near-infrared brain imaging technology has great potential as a non-invasive, real-time inspection technique. Silicon-tin (SiSn) alloy films could be a promising material for near-infrared brain detectors. This study mainly reports on the structure of amorphous silicon tin alloy thin films by Raman spectroscopy to investigate the influence of doped-Sn on an a-Si network. The variations in TO peak caused by the increase in Sn concentration indicate a decrease in the short-range order of the a-Si network. A model has been proposed to successfully explain the non-linear variation in Raman parameters of ITA/ITO and ILA+LO/ITO. The variations of Raman parameters of the films with a higher deposition temperature indicate the presence of SiSn nanocrystals, though the SiSn nanocrystals present no Raman peaks in Raman spectra. XRD and TEM analysis further illustrate the existence of nanocrystals. The ratio of photo/dark conductivity and optical bandgap results demonstrate that the films can be selected as a sensitive layer material for NIR-II region sensors.

Improved Light Soaking Stability of R.F. Sputter Deposited Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
A. Wynveen ◽  
J. Fan ◽  
J. Kakalios ◽  
J. Shinar
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Initial Defect ◽  
Optical Gap ◽  
Sputter Deposited ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous

ABSTRACTStudies of r.f. sputter deposited hydrogenated amorphous silicon (a-Si:H) find that the light induced decrease in the dark conductivity and photoconductivity (the Staebler-Wronski effect) is reduced when the r.f. power used during deposition is increased. The slower Staebler-Wronski effect is not due to an increase in the initial defect density in the high r.f. power samples, but may result from either the lower hydrogen content or the smaller optical gap found in these films.

Tunneling through the space charge region in a metal-amorphous silicon contact

1986 ◽  
Vol 29 (11) ◽  
pp. 865-868
Author(s):  
V. I. Strikha ◽  
V. V. Il'chenko
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Space Charge Region
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