Temperature dependence of Schottky barrier heights on silicon

1993 ◽  
Vol 73 (3) ◽  
pp. 1315-1319 ◽  
Author(s):  
Jürgen H. Werner ◽  
Herbert H. Güttler
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Heights

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

Photovoltaic effect and Schottky barriers in the Au–In1−xGaxSb system

1980 ◽  
Vol 58 (1) ◽  
pp. 63-67 ◽  
Author(s):  
W. J. Keeler ◽  
A. P. Roth ◽  
E. Fortin
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
System Analysis ◽  
Photovoltaic Effect ◽  
Alloy System ◽  
Schottky Barriers ◽  
Type Region ◽  
Barrier Heights ◽  
P Type

The temperature dependence of the photovoltaic effect between 6 and 300 K has been measured on the Au–In1−xGaxSb system. Analysis of the data gives the Schottky barrier heights across the alloy system. In the n-type region of the system (InSb rich) the barrier is found to be [Formula: see text] while in the p-type region (GaSb rich) it is [Formula: see text].

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights

1982 ◽  
Vol 53 (6) ◽  
pp. 4521-4523 ◽  
Author(s):  
K. Okamoto ◽  
C. E. C. Wood ◽  
L. Rathbun ◽  
L. F. Eastman
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Barrier Heights

scholarly journals Tuning of NiSi∕Si Schottky barrier heights by sulfur segregation during Ni silicidation

2005 ◽  
Vol 86 (6) ◽  
pp. 062108 ◽  
Author(s):  
Q. T. Zhao ◽  
U. Breuer ◽  
E. Rije ◽  
St. Lenk ◽  
S. Mantl
Keyword(s):  
Schottky Barrier ◽  
Sulfur Segregation ◽  
Barrier Heights

Schottky barrier heights of epitaxial Ni–silicides on Si(111)

1986 ◽  
Vol 4 (3) ◽  
pp. 855-859 ◽  
Author(s):  
M. Liehr ◽  
P. E. Schmid ◽  
F. K. LeGoues ◽  
P. S. Ho
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Ni Silicides

scholarly journals Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces

2021 ◽  
Vol 129 (17) ◽  
pp. 175304
Author(s):  
Jiaqi Chen ◽  
Zhaofu Zhang ◽  
Yuzheng Guo ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
Free Metal
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