Photovoltaic effect and Schottky barriers in the Au–In1−xGaxSb system

1980 ◽  
Vol 58 (1) ◽  
pp. 63-67 ◽  
Author(s):  
W. J. Keeler ◽  
A. P. Roth ◽  
E. Fortin
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
System Analysis ◽  
Photovoltaic Effect ◽  
Alloy System ◽  
Schottky Barriers ◽  
Type Region ◽  
Barrier Heights ◽  
P Type

The temperature dependence of the photovoltaic effect between 6 and 300 K has been measured on the Au–In1−xGaxSb system. Analysis of the data gives the Schottky barrier heights across the alloy system. In the n-type region of the system (InSb rich) the barrier is found to be [Formula: see text] while in the p-type region (GaSb rich) it is [Formula: see text].

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

Electrical Properties and Schottky Barriers of Metal-Semiconductor Interfaces

1990 ◽  
Vol 181 ◽  
Author(s):  
M.O. Aboelfotoh
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Barrier Formation ◽  
Indirect Band Gap ◽  
P Type

ABSTRACTThe electrical properties of metal/Si(100) and metal/Ge(100) interfaces formed by the deposition of metal on both n-type and p-type Si(100) and Ge(100) have been studied in the temperature range 77-295 K with the use of current- and capacitance-voltage techniques. Compound formation is found to have very little or no effect on the Schottky-barrier height and its temperature dependence. For silicon, the barrier height and its temperature dependence are found to be affected by the metal. For germanium, on the other hand, the barrier height and its temperature dependence are unaffected by the metal. The temperature dependence of the Si and Ge barrier heights is found to deviate from the predictions of recent models of Schottky-barrier formation based on the suggestion of Fermi-level pinning in the center of the semiconductor indirect band gap.

Schottky Barrier Heights of Cr Contacts on n- and p-Type 6H-SiC

1997 ◽  
Vol 14 (6) ◽  
pp. 460-463 ◽  
Author(s):  
Zhang Yong-gang ◽  
Li Ai-zhen ◽  
A G Milnes
Keyword(s):  
Schottky Barrier ◽  
Barrier Heights ◽  
P Type

Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition

2006 ◽  
Vol 89 (12) ◽  
pp. 122106 ◽  
Author(s):  
Hung-Ta Wang ◽  
S. Jang ◽  
T. Anderson ◽  
J. J. Chen ◽  
B. S. Kang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Metal Deposition ◽  
Barrier Heights ◽  
P Type

Optical Absorption at Digitally and Continuously Graded Indium Gallium Nitride Schottky Barriers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Gallium Nitride ◽  
Optical Absorption ◽  
Schottky Barrier ◽  
Indium Gallium Nitride ◽  
Spectral Response ◽  
Alloy System ◽  
Schottky Barriers ◽  
Material System ◽  
Indium Gallium ◽  
Absorption Characteristics

AbstractWe present numerical calculations of the optical absorption characteristics of graded Indium Gallium Nitride Schottky Barriers, and study their implications for photovoltaic and photodetector applications. We consider the two cases of digital and continuous grading because of their different effects on the collection of photo-generated carriers due to band discontinuities. Composition grading can achieve desired spectral response between the ranges of 0.7 eV and 3.43 eV afforded by the Indium Gallium Nitride alloy system. The presence of spontaneous and piezoelectric polarizations in this material system adds bulk and/or interface bound charges in graded layers. This has a non-trivial effect on the band profile seen by the photo-generated carriers. The layer thicknesses needed for optimal absorption characteristics are well above the theoretical critical thickness limits reported in the literature for abrupt heterojunctions. However, experimental data about critical thicknesses is scarce, especially for graded compositions. Therefore, we calculate the characteristics of the Schottky barrier for the case of spontaneous polarization only and also for the case of both spontaneous and piezoelectric polarization assuming no relaxation. The low or even negative Schottky barrier heights at low Gallium composition necessitates the use of high Gallium composition layers next to the metal, in order to suppress the excessive dark currents

scholarly journals Fluorographane: a promising material for bipolar doping of MoS2

2015 ◽  
Vol 17 (41) ◽  
pp. 27636-27641 ◽  
Author(s):  
Deniz Çakır ◽  
Francois M. Peeters
Keyword(s):  
Schottky Barrier ◽  
First Principles ◽  
Promising Material ◽  
First Principles Calculations ◽  
Barrier Heights ◽  
P Type

Using first principles calculations we show that one can realize vanishing n-type/p-type Schottky barrier heights when contacting MoS2 to fluorographane.

Schottky Barrier Heights of Refractory Metals on Silicon

1986 ◽  
Vol 71 ◽  
Author(s):  
M. O. Aboelfotoh
Keyword(s):  
Schottky Barrier ◽  
Refractory Metal ◽  
Energy Gap ◽  
Silicide Phase ◽  
Metal Silicide ◽  
Measured Temperature ◽  
Experimental Accuracy ◽  
Barrier Heights ◽  
Increasing Temperature ◽  
P Type

AbstractMeasurements of Schottky-barrier heights in the temperature range 175-295 K for refractory metal-silicon and corresponding silicide-silicon interfaces are presented. Refractory metal silicide formation is shown to have only a small effect on the barrier height. The n-type and p-type barrier heights for both the metal and the reacted silicide phase are shown to decrease with increasing temperature with the stun equal, within the experimental accuracy, to the indirect energy gap of silicon at any measured temperature. These results indicate that the temperature dependence of the barrier heights is mainly due to that of the indirect energy gap in the silicon.

Temperature dependence of Schottky barrier heights on silicon

1993 ◽  
Vol 73 (3) ◽  
pp. 1315-1319 ◽  
Author(s):  
Jürgen H. Werner ◽  
Herbert H. Güttler
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Heights

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
R. T. Tung ◽  
A. F. J. Levi ◽  
J. M. Gibson ◽  
K. K. Ng ◽  
A. Chantre
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Region ◽  
Ideal Behavior ◽  
Near Surface ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

ABSTRACTThe Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

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