Effect of deep traps on the capacitance‐voltage plots of Schottky barrier diodes: Application to the study of sputter‐etched Ti‐W/n‐Si diodes

1993 ◽  
Vol 73 (4) ◽  
pp. 1858-1865 ◽  
Author(s):  
D. Bauza
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Deep Traps ◽  
Capacitance Voltage

Temperature-Dependent Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of Ni/Cu/n-InP Schottky Barrier Diodes

2013 ◽  
Vol 43 (1-2) ◽  
pp. 13-21 ◽  
Author(s):  
Y. Munikrishana Reddy ◽  
M. K. Nagaraj ◽  
M. Siva Pratap Reddy ◽  
Jung-Hee Lee ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Capacitance Voltage

Correlation between Deep-Level Defects and Current Collapses in AlGaN/GaN Hetero-Structures Probed by Steady-State Photo-Capacitance Spectroscopy

2011 ◽  
Vol 1309 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Yoshihiro Irokawa ◽  
Yasunobu Sumida ◽  
Shuichi Yagi ◽  
Hiroji Kawai
Keyword(s):  
Steady State ◽  
Schottky Barrier ◽  
Conduction Band ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Barrier Diodes ◽  
Current Collapse ◽  
Capacitance Voltage ◽  
Capacitance Spectroscopy

ABSTRACTWe have investigated a correlation between electronic deep levels and current collapses in AlGaN/GaN hetero-structures by capacitance-voltage and photo-capacitance spectroscopy techniques, using Schottky barrier diodes. Three specific deep levels located at ~2.07, ~2.80, ~3.23eV below the conduction band were found to be significantly enhanced for the severe current collapse. These levels probably originate in Ga vacancies and residual C impurities and are probably responsible for the current collapses of the AlGaN/GaN hetero-structures.

The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

Silicon ◽  
2018 ◽  
Vol 11 (6) ◽  
pp. 2647-2657 ◽  
Author(s):  
Durmuş Ali Aldemir ◽  
Rukiye Aldemir ◽  
Ali Kökce ◽  
Songül Duman ◽  
Ahmet Faruk Özdemir
Keyword(s):  
Thermal Neutron ◽  
Schottky Barrier ◽  
Neutron Irradiation ◽  
Schottky Barrier Diodes ◽  
Thermal Neutron Irradiation ◽  
Current Voltage ◽  
Capacitance Voltage

Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes

2009 ◽  
Vol 3 (7-8) ◽  
pp. 266-268 ◽  
Author(s):  
Yoshihiro Irokawa ◽  
Nobuyuki Matsuki ◽  
Masatomo Sumiya ◽  
Yoshiki Sakuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Low Frequency ◽  
Schottky Barrier Diodes ◽  
Hydrogen Interaction ◽  
Capacitance Voltage

Statistical Analysis of the Current–Voltage (I–V) and Capacitance–Voltage (C–V) Characteristics of the Au/Ir/n-InGaN Schottky Barrier Diodes

2018 ◽  
Vol 24 (8) ◽  
pp. 5582-5586
Author(s):  
R Padma ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Ideality Factor ◽  
Series Resistance ◽  
Electron Beam Evaporation ◽  
Statistical Distribution ◽  
Schottky Barrier Diodes ◽  
Shunt Resistance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
The Mean

In the present work, 20 Au/Ir/n-InGaN Schottky barrier diodes (SBDs) are fabricated using a electron beam evaporation technique. The Schottky barrier parameters such as ideality factor (n), Schottky barrier height (SBH) (Φb) and donar concentration (Nd) values are determined by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. From I–V measurements, the statistical distribution of data gives the mean SBH value of 0.70 eV with a normal deviation of 10 meV and mean ideality factor value of 1.50 with a normal deviation of 0.0478. Two important parameters such as series resistance (RS) and shunt resistance (RSh) are also evaluated from the I–V characteristics. Furthermore, Norde and Cheung’s methods are used to evaluate the SBH, ideality factor and series resistance. The statistical distribution of C–V data gives the mean SBH value of 0.91 eV with a normal deviation of 12 meV and mean donar concentration of 0.71 × 1017 cm−3, with a normal deviation of 0.018 × 1017 cm−3 respectively.

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