Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates

2011 ◽  
Vol 109 (3) ◽  
pp. 033505 ◽  
Author(s):  
F. Wu ◽  
A. Tyagi ◽  
E. C. Young ◽  
A. E. Romanov ◽  
K. Fujito ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Free Standing ◽  
Heteroepitaxial Layers ◽  
Dislocation Formation

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Heteroepitaxial Layer Morphology and Misfit Defect Formation

1995 ◽  
Vol 399 ◽  
Author(s):  
A.G. Cullis
Keyword(s):  
Free Energy ◽  
Misfit Dislocation ◽  
Defect Formation ◽  
Elastic Stress ◽  
Stress Relief ◽  
Misfit Strain ◽  
Theoretical Modelling ◽  
Initial Growth ◽  
Dislocation Source ◽  
Heteroepitaxial Layers

ABSTRACTThe manner in which misfit strain can influence the morphology of heteroepitaxial layers is reviewed. Following a brief consideration of theoretical modelling, examples of experimental observations for two important materials systems, SiGe/Si and InGaAs/GaAs, are given. It is demonstrated that the formation of undulations of specific types is driven by partial elastic stress-relief and a lowering of the system free energy. Under these conditions, islands of deposit can be formed during initial growth and ripples can be produced upon continuous layers. Furthermore, the presence of surface morphological distortions and the accompanying strain fluctuations also can have a significant impact upon misfit dislocation introduction. Relationships between these fluctuations and dislocation source behaviour are described.

The effect of implantation temperature on the mechanism of misfit dislocation formation

1978 ◽  
Vol 45 (2) ◽  
pp. 377-385 ◽  
Author(s):  
V. V. Kalinin ◽  
N. N. Gerasimenko ◽  
S. I. Stenin
Keyword(s):  
Misfit Dislocation ◽  
Implantation Temperature ◽  
Dislocation Formation

Interfacial stability and misfit dislocation formation in InAs/GaAs(110) heteroepitaxy

1998 ◽  
Vol 411 (3) ◽  
pp. L865-L871 ◽  
Author(s):  
Dimitrios Maroudas ◽  
Luis A. Zepeda-Ruiz ◽  
W.Henry Weinberg
Keyword(s):  
Misfit Dislocation ◽  
Interfacial Stability ◽  
Dislocation Formation

Misfit dislocation formation in p/p+ silicon vapor-phase epitaxy

2000 ◽  
Vol 209 (4) ◽  
pp. 716-723 ◽  
Author(s):  
H. Fukuto ◽  
P. Feichtinger ◽  
G.D. U'Ren ◽  
S. Lindo ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Misfit Dislocation ◽  
Vapor Phase Epitaxy ◽  
Silicon Vapor ◽  
Dislocation Formation

Stabilization of strained multilayers by thin interlayers

1993 ◽  
Vol 8 (7) ◽  
pp. 1572-1577 ◽  
Author(s):  
J.P. Hirth
Keyword(s):  
Shear Stress ◽  
Misfit Dislocation ◽  
Pure Shear ◽  
Lattice Parameters ◽  
Biaxial Stress ◽  
Thin Interlayer ◽  
Dislocation Formation

Strained multilayers composed of two misfitting layers and a third, thin interlayer are considered. With appropriate intermediate lattice parameters for the interlayer, the latter is shown to stabilize the structure with respect to misfit dislocation formation. Cases of misfit corresponding both to balanced biaxial stress and to pure shear stress in the interface are treated.

Misfit dislocation formation in the AlGaN∕GaN heterointerface

2004 ◽  
Vol 96 (12) ◽  
pp. 7087-7094 ◽  
Author(s):  
J. A. Floro ◽  
D. M. Follstaedt ◽  
P. Provencio ◽  
S. J. Hearne ◽  
S. R. Lee
Keyword(s):  
Misfit Dislocation ◽  
Dislocation Formation

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

2012 ◽  
Vol 717-720 ◽  
pp. 313-318 ◽  
Author(s):  
Xuan Zhang ◽  
Tetsuya Miyazawa ◽  
Hidekazu Tsuchida
Keyword(s):  
Temperature Gradient ◽  
Misfit Dislocation ◽  
Annealing Temperature ◽  
Critical Value ◽  
Critical Conditions ◽  
Formation Mechanisms ◽  
Misfit Dislocations ◽  
Interfacial Dislocations ◽  
Annealing Experiments ◽  
Dislocation Formation

Thermal annealing experiments were performed to determine the critical conditions of misfit dislocation formation in 4H-SiC epilayers in a temperature range of 1400-1800 °C. Misfit dislocations were observed to form at a given annealing temperature if the temperature gradient across the epi-wafer exceeded a critical value. It was also found that two types of interfacial dislocations could form under different stress conditions. Their formation mechanisms are discussed.

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