Initial stages of misfit dislocation formation in compressively strained Si‐Ge short period superlattices

1994 ◽  
Vol 76 (8) ◽  
pp. 4625-4629 ◽  
Author(s):  
M. Dynna ◽  
G. C. Weatherly
Keyword(s):  
Misfit Dislocation ◽  
Strained Si ◽  
Short Period ◽  
Short Period Superlattices ◽  
Dislocation Formation

Interface Structure of Ge/Si Superlattices Determined by X-Ray Absorption Fine Structure

1991 ◽  
Vol 220 ◽  
Author(s):  
P. Aebi ◽  
T. Tyliszczak ◽  
A. P. Hitchcock ◽  
J. -M. Baribeau ◽  
D. J. Lockwood ◽  
...  
Keyword(s):  
Fine Structure ◽  
Bond Length ◽  
Strained Si ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Absorption Fine ◽  
Nearest Neighbours ◽  
Short Period ◽  
Short Period Superlattices ◽  
X Ray Absorption

ABSTRACTWe illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to determine the amount of interface mixing and strain condition in the study of (SimGen)p short-period superlattices. It is found that for n < 4, the number of Ge and Si nearest neighbours to Ge atoms is consistent with ∼25% interfacial mixing and that the Ge-Ge bond length corresponds to that of coherently strained Ge. The Si-Ge bond length is shorter, close to that of a strained Si0.25Ge0.75 alloy. For n > 4, the Ge-Ge bond length and the number of Si-Ge nearest neighbours increase significantly consistent with partial relaxation and interdiffusion. Raman scattering spectroscopy and x-ray reflectometry measurements are also presented and are consistent with the conclusions of the EXAFS analysis.

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

Blue-green lasers based on short-period superlattices in II-VI compounds

1999 ◽  
Vol 169 (4) ◽  
pp. 468 ◽  
Author(s):  
S.V. Ivanov ◽  
Petr S. Kop'ev ◽  
A.A. Toropov
Keyword(s):  
Short Period ◽  
Short Period Superlattices

scholarly journals The Band-Gap Studies of Short-Period CdO/MgO Superlattices

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ewa Przeździecka ◽  
P. Strąk ◽  
A. Wierzbicka ◽  
A. Adhikari ◽  
A. Lysak ◽  
...  
Keyword(s):  
Band Gap ◽  
Layer Thickness ◽  
Energy Gap ◽  
Band Gaps ◽  
Short Period ◽  
Wide Range ◽  
Salt Structure ◽  
Short Period Superlattices ◽  
Direct Band ◽  
Sublayer Thickness

AbstractTrends in the behavior of band gaps in short-period superlattices (SLs) composed of CdO and MgO layers were analyzed experimentally and theoretically for several thicknesses of CdO sublayers. The optical properties of the SLs were investigated by means of transmittance measurements at room temperature in the wavelength range 200–700 nm. The direct band gap of {CdO/MgO} SLs were tuned from 2.6 to 6 eV by varying the thickness of CdO from 1 to 12 monolayers while maintaining the same MgO layer thickness of 4 monolayers. Obtained values of direct and indirect band gaps are higher than those theoretically calculated by an ab initio method, but follow the same trend. X-ray measurements confirmed the presence of a rock salt structure in the SLs. Two oriented structures (111 and 100) grown on c- and r-oriented sapphire substrates were obtained. The measured lattice parameters increase with CdO layer thickness, and the experimental data are in agreement with the calculated results. This new kind of SL structure may be suitable for use in visible, UV and deep UV optoelectronics, especially because the energy gap can be precisely controlled over a wide range by modulating the sublayer thickness in the superlattices.

Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures

2015 ◽  
Vol 54 (11) ◽  
pp. 115501 ◽  
Author(s):  
Motoaki Iwaya ◽  
Taiji Yamamoto ◽  
Daisuke Iida ◽  
Yasunari Kondo ◽  
Mihoko Sowa ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Misfit Dislocation ◽  
Threading Dislocation ◽  
Threading Dislocation Density ◽  
Dislocation Formation

Thickness dependence of temperature-induced emission mechanism in InGaN/AlGaN short-period superlattices

2012 ◽  
Vol 112 (4) ◽  
pp. 043102 ◽  
Author(s):  
Young-Kyun Noh ◽  
Jeong-Han Seo ◽  
Hyo-Seok Choi ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh
Keyword(s):  
Thickness Dependence ◽  
Emission Mechanism ◽  
Short Period ◽  
Short Period Superlattices

Instabilities, Elasticity, and Wetting Effect in Multilayer Heteroepitaxial Growth

2003 ◽  
Vol 794 ◽  
Author(s):  
Zhi-Feng Huang ◽  
Rashmi C. Desai
Keyword(s):  
Periodic Structures ◽  
Morphological Evolution ◽  
Surface Profile ◽  
Theoretical Work ◽  
Semiconductor Films ◽  
Morphological Instability ◽  
Heteroepitaxial Growth ◽  
Surface And Interface ◽  
Short Period ◽  
Short Period Superlattices

ABSTRACTFor multilayer semiconductor films comprising various material layers, the coupling of elastic states in different layers as well as the nonequilibrium nature of the growing process are essential in understanding the surface and interface morphological instability and hence the growth mechanisms of nanostructures in the overall film. We present the theoretical work on the stress-driven instabilities during the heteroepitaxial growth of multilayers, based on the elastic analysis and the continuous nonequilibrium model. We develop a general theory which determines the morphological evolution of surface profile of the multilayer system, and then apply the results to two types of periodic structures that are being actively investigated: alternating tensile/compressive and strained/spacer multilayers. The wetting effect, which arises from the material properties changing across layer-layer interfaces, is incorporated. It exhibits a significant influence of stabilization on film morphology, particularly for the short-period superlattices. Our results are consistent with the experimental observations in AlAs/InAs/InP(001) and Ge/Si(001) multilayer structures.

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