Laser reflective interferometry forin situmonitoring of diamond film growth by chemical vapor deposition

1993 ◽  
Vol 73 (6) ◽  
pp. 2977-2982 ◽  
Author(s):  
Ching‐Hsong Wu ◽  
W. H. Weber ◽  
T. J. Potter ◽  
M. A. Tamor
2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.


1995 ◽  
Vol 77 (11) ◽  
pp. 5916-5923 ◽  
Author(s):  
Richard W. Bormett ◽  
Sanford A. Asher ◽  
Robert E. Witowski ◽  
William D. Partlow ◽  
Robert Lizewski ◽  
...  

1989 ◽  
Vol 155 ◽  
Author(s):  
Steven M. Valone

ABSTRACTQuestions about the mechanism of diamond film growth by low-pressure, plasma-assisted chemical vapor deposition methods have persisted for some time now. As an attempt to explore one aspect of the problem, we examine the energetics of several adsorbed diamond (111) surfaces. The adsorbates are mixtures of methyl groups and hydrogen atoms. The model for these systems is the molecular orbital hamiltonian of Dewar and coworkers.From these calculations we find that H adsorbtion is preferred due both to bond energy and steric effects. Thus, nucleation of a cluster of three or more methyl groups, as assumed in earlier work, is energetically very demanding.


Sign in / Sign up

Export Citation Format

Share Document