Modeling Chemical Vapor Deposition (CVD) Diamond Film Growth with Diamantane-Derived Radicals in Solution:  Permissive Evidence in Support of the Garrison−Brenner Mechanism for Incorporation of Carbon into the Dimer Sites of the {100} Diamond Surface

1999 ◽  
Vol 64 (20) ◽  
pp. 7612-7617 ◽  
Author(s):  
Ken S. Feldman ◽  
Robert F. Campbell ◽  
Theodore R. West ◽  
Allen D. Aloise ◽  
David M. Giampetro
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Surface ◽  
Cvd Diamond Film ◽  
Diamond Film Growth

DYNAMIC SCALING PHENOMENA IN DIAMOND FILM GROWTH

2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI
Keyword(s):  
Chemical Vapor Deposition ◽  
Differential Equations ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Dynamic Scaling ◽  
Diamond Film Growth

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.

Ultraviolet Raman spectroscopy characterizes chemical vapor deposition diamond film growth and oxidation

1995 ◽  
Vol 77 (11) ◽  
pp. 5916-5923 ◽  
Author(s):  
Richard W. Bormett ◽  
Sanford A. Asher ◽  
Robert E. Witowski ◽  
William D. Partlow ◽  
Robert Lizewski ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Diamond ◽  
Diamond Film Growth

scholarly journals Barriers to the Nucleation of Methyl Groups on the Diamond (111) Surface

1989 ◽  
Vol 155 ◽  
Author(s):  
Steven M. Valone
Keyword(s):  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Steric Effects ◽  
Methyl Groups ◽  
Hydrogen Atoms ◽  
Low Pressure Plasma ◽  
Diamond Film Growth

ABSTRACTQuestions about the mechanism of diamond film growth by low-pressure, plasma-assisted chemical vapor deposition methods have persisted for some time now. As an attempt to explore one aspect of the problem, we examine the energetics of several adsorbed diamond (111) surfaces. The adsorbates are mixtures of methyl groups and hydrogen atoms. The model for these systems is the molecular orbital hamiltonian of Dewar and coworkers.From these calculations we find that H adsorbtion is preferred due both to bond energy and steric effects. Thus, nucleation of a cluster of three or more methyl groups, as assumed in earlier work, is energetically very demanding.

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