Kinetics of tungsten low‐pressure chemical‐vapor deposition using WF6and SiH4studied byin situgrowth‐rate measurements

J. A. M. Ammerlaan; P. J. van der Put; J. Schoonman

doi:10.1063/1.352757

Kinetics of tungsten low‐pressure chemical‐vapor deposition using WF6and SiH4studied byin situgrowth‐rate measurements

Journal of Applied Physics ◽

10.1063/1.352757 ◽

1993 ◽

Vol 73 (9) ◽

pp. 4631-4636 ◽

Cited By ~ 10

Author(s):

J. A. M. Ammerlaan ◽

P. J. van der Put ◽

J. Schoonman

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Kinetics Of

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The Kinetics of the Low‐Pressure Chemical Vapor Deposition of Polycrystalline Silicon from Silane

Journal of The Electrochemical Society ◽

10.1149/1.1838458 ◽

1998 ◽

Vol 145 (4) ◽

pp. 1318-1330 ◽

Cited By ~ 18

Author(s):

W. L. M. Weerts ◽

M. H. J. M. de Croon ◽

G. B. Marin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Kinetics Of

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Kinetics of Si growth on Ge(100) in Si2H6 gas-source molecular beam epitaxy and low-pressure chemical vapor deposition

Surface Science ◽

10.1016/0039-6028(94)00672-5 ◽

1995 ◽

Vol 323 (3) ◽

pp. 269-274 ◽

Cited By ~ 7

Author(s):

Housei Akazawa

Keyword(s):

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Vapor Deposition ◽

Molecular Beam ◽

Chemical Vapor ◽

Low Pressure ◽

Gas Source ◽

Pressure Chemical ◽

Kinetics Of

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Kinetics of the Formation of Titanium Nitride Layers by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiCl4 ‐ NH 3 ‐ H 2

Journal of The Electrochemical Society ◽

10.1149/1.1838536 ◽

1998 ◽

Vol 145 (5) ◽

pp. 1672-1677 ◽

Cited By ~ 15

Author(s):

L. Imhoff ◽

A. Bouteville ◽

J. C. Remy

Keyword(s):

Chemical Vapor Deposition ◽

Titanium Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Nitride Layers ◽

Kinetics Of

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Kinetics of surface reactions in very low‐pressure chemical vapor deposition of Si from SiH4

Applied Physics Letters ◽

10.1063/1.104709 ◽

1991 ◽

Vol 58 (25) ◽

pp. 2963-2965 ◽

Cited By ~ 110

Author(s):

S. M. Gates ◽

S. K. Kulkarni

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Surface Reactions ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Kinetics Of

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Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium‐Silicon Alloys from SiH4 and GeH4

Journal of The Electrochemical Society ◽

10.1149/1.2221630 ◽

1993 ◽

Vol 140 (6) ◽

pp. 1717-1722 ◽

Cited By ~ 27

Author(s):

J. Holleman ◽

A. E. T. Kuiper ◽

J. F. Verweij

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Alloys ◽

Pressure Chemical ◽

Germanium Silicon ◽

Kinetics Of

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Kinetics of Low‐Pressure Chemical Vapor Deposition of TiO2 from Titanium Tetraisopropoxide

Journal of The Electrochemical Society ◽

10.1149/1.2086561 ◽

1990 ◽

Vol 137 (3) ◽

pp. 814-818 ◽

Cited By ~ 86

Author(s):

K. L. Siefering ◽

G. L. Griffin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Titanium Tetraisopropoxide ◽

Pressure Chemical ◽

Kinetics Of

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Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarization

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:20020079 ◽

2002 ◽

Vol 12 (4) ◽

pp. 69-74 ◽

Cited By ~ 2

Author(s):

A. Levesque ◽

A. Bouteville ◽

H. de Baynast ◽

B. Laveissière

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Corrosion Behaviour ◽

Chemical Vapor ◽

Low Pressure ◽

Electrochemical Polarization ◽

Pressure Chemical

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ANALYSIS OF HEAT AND MASS TRANSFER DURING MULTI-WAFER LOW PRESSURE CHEMICAL VAPOR DEPOSITION PROCESS

Proceeding of International Heat Transfer Conference 11 ◽

10.1615/ihtc11.240 ◽

1998 ◽

Author(s):

K.S. Park ◽

M. Choi

Keyword(s):

Mass Transfer ◽

Chemical Vapor Deposition ◽

Heat And Mass Transfer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Chemical Vapor Deposition Process ◽

Pressure Chemical ◽

Vapor Deposition Process

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Electrical Properties of 10-50 nm TEOS (Tetraethoxysilane) LPCVD (Low Pressure Chemical Vapor Deposition) Films.

10.21236/ada146416 ◽

1984 ◽

Author(s):

R. H. Vogel ◽

S. R. Butler ◽

F. J. Feigl

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 47th IEEE Photovoltaic Specialists Conference (PVSC) ◽

10.1109/pvsc45281.2020.9300543 ◽

2020 ◽

Author(s):

Meric Firat ◽

Hariharsudan Sivaramakrishnan Radhakrishnan ◽

Maria Recaman Payo ◽

Filip Duerinckx ◽

Rajiv Sharma ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical ◽

Phosphorus Doped

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