scholarly journals Limits to ion energy control in high density glow discharges: Measurement of absolute metastable ion concentrations

1993 ◽  
Vol 73 (11) ◽  
pp. 7188-7194 ◽  
Author(s):  
Konstantinos P. Giapis ◽  
Nader Sadeghi ◽  
Joëlle Margot ◽  
Richard A. Gottscho ◽  
T. C. John Lee
Keyword(s):  
High Density ◽  
Energy Control ◽  
Ion Energy ◽  
Ion Concentrations ◽  
Glow Discharges

scholarly journals Etch Processing of III-V Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 902-913 ◽  
Author(s):  
Charles R. Eddy
Keyword(s):  
Plasma Etching ◽  
Microwave Power ◽  
Ohmic Contacts ◽  
High Density ◽  
Etching Process ◽  
Ion Energy ◽  
Plasma Etching Process ◽  
Device Processing ◽  
The Impact ◽  
Density Plasma

As III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AlN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

scholarly journals Ion energy control via the electrical asymmetry effect to tune coating properties in reactive radio frequency sputtering

2019 ◽  
Vol 28 (11) ◽  
pp. 114001 ◽  
Author(s):  
Stefan Ries ◽  
Lars Banko ◽  
Marcus Hans ◽  
Daniel Primetzhofer ◽  
Jochen M Schneider ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Coating Properties ◽  
Energy Control ◽  
Ion Energy ◽  
Asymmetry Effect ◽  
Radio Frequency Sputtering

Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTe

1996 ◽  
Vol 450 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
R. T. Holm ◽  
O. J. Glembocki ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Plasma Etching ◽  
High Density ◽  
Scanning Electron Micrographs ◽  
Plasma Etch ◽  
Ion Energy ◽  
Residual Damage ◽  
Hall Effect Measurements ◽  
Density Plasma

ABSTRACTHigh density plasma etching of Hg1−xCdxTe in CH4/H2/Ar chemistry is examined using mass spectroscopy with careful surface temperature monitoring. The dominant etch products are monitored as a function of surface temperature (15–200°C), ion energy (20–200 eV), total pressure (0.5–5 mTorr), microwave power (200–400 W), and flow fraction of methane in the etch gas mixture (0–30%). In addition, observations are made regarding the regions of parameter space which are best suited to anisotropie, low damage etch processing. These observations are compared with previous results in the form of scanning electron micrographs of etched features for anisotropy evaluation and Hall effect measurements for residual damage. Insights to the overall etch mechanism are given.

Effects of Ion Energy Control on Production of Nitrogen–C60Compounds by Ion Implantation

2006 ◽  
Vol 45 (10B) ◽  
pp. 8340-8343 ◽  
Author(s):  
Shigeyuki Abe ◽  
Genta Sato ◽  
Toshiro Kaneko ◽  
Takamichi Hirata ◽  
Rikizo Hatakeyama ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Energy Control ◽  
Ion Energy

Evidence for inelastic processes for N+3and N+4from ion energy distributions in He/N2radio frequency glow discharges

1996 ◽  
Vol 79 (1) ◽  
pp. 93-98 ◽  
Author(s):  
Helen H. Hwang ◽  
James K. Olthoff ◽  
Richard J. Van Brunt ◽  
Svetlana B. Radovanov ◽  
Mark J. Kushner
Keyword(s):  
Energy Distributions ◽  
Ion Energy ◽  
Glow Discharges ◽  
Ion Energy Distributions ◽  
Inelastic Processes

Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films

2018 ◽  
Vol 660 ◽  
pp. 865-870 ◽  
Author(s):  
Shinya Iwashita ◽  
Kazuki Denpoh ◽  
Munehito Kagaya ◽  
Takamichi Kikuchi ◽  
Naotaka Noro ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Energy Control ◽  
Ion Energy ◽  
Titanium Dioxide Films ◽  
Layer Deposition
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