Posthydrogenation of low‐pressure chemical‐vapor‐deposited amorphous silicon using a novel internal lamp system and its application to thin‐film transistor fabrication

Yatsutaka Uchida; Steven C. Deane; William I. Milne

doi:10.1063/1.352327

Posthydrogenation of low‐pressure chemical‐vapor‐deposited amorphous silicon using a novel internal lamp system and its application to thin‐film transistor fabrication

Journal of Applied Physics ◽

10.1063/1.352327 ◽

1992 ◽

Vol 72 (7) ◽

pp. 3150-3154 ◽

Cited By ~ 2

Author(s):

Yatsutaka Uchida ◽

Steven C. Deane ◽

William I. Milne

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistor ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Lamp System ◽

Transistor Fabrication

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Cited By ~ 6

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Atomic force microscope study of amorphous silicon and polysilicon low-pressure chemical-vapor-deposited implanted layers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591148 ◽

2000 ◽

Vol 18 (1) ◽

pp. 41 ◽

Cited By ~ 13

Author(s):

R. Edrei ◽

E. N. Shauly ◽

A. Hoffman

Keyword(s):

Atomic Force Microscope ◽

Amorphous Silicon ◽

Microscope Study ◽

Chemical Vapor ◽

Low Pressure ◽

Atomic Force ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Effects of temperature and electrical stress on the performance of thin‐film transistors fabricated from undoped low‐pressure chemical vapor deposited polycrystalline silicon

Applied Physics Letters ◽

10.1063/1.100897 ◽

1989 ◽

Vol 54 (7) ◽

pp. 620-622 ◽

Cited By ~ 33

Author(s):

C. A. Dimitriadis ◽

P. A. Coxon

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Electrical Stress ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Effects Of Temperature

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Beam Shape Effects with Excimer Laser Crystallisation of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Amorphous Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.299 ◽

1994 ◽

Vol 37-38 ◽

pp. 299-304 ◽

Cited By ~ 13

Author(s):

S.D. Brotherton ◽

D.J. McCulloch ◽

M.J. Edwards

Keyword(s):

Amorphous Silicon ◽

Excimer Laser ◽

Chemical Vapor ◽

Low Pressure ◽

Beam Shape ◽

Chemical Vapor Deposited ◽

Shape Effects ◽

Pressure Chemical

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Improving low pressure chemical vapor deposited zinc oxide contacts for thin film silicon solar cells by using rough glass substrates

Thin Solid Films ◽

10.1016/j.tsf.2011.06.080 ◽

2011 ◽

Vol 520 (4) ◽

pp. 1218-1222 ◽

Cited By ~ 14

Author(s):

J. Steinhauser ◽

J.-F. Boucher ◽

E. Omnes ◽

D. Borrello ◽

E. Vallat-Sauvain ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Solar Cells ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Solar Cells ◽

Glass Substrates ◽

Thin Film Silicon ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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The post-hydrogenation of low-pressure chemical vapor deposited amorphous silicon

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(83)90065-0 ◽

1983 ◽

Vol 54 (3) ◽

pp. 199-205 ◽

Cited By ~ 25

Author(s):

A.E. Widmer ◽

R. Fehlmann ◽

C.W. Magee

Keyword(s):

Amorphous Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.343327 ◽

1989 ◽

Vol 65 (10) ◽

pp. 4036-4039 ◽

Cited By ~ 72

Author(s):

I.‐W. Wu ◽

A. Chiang ◽

M. Fuse ◽

L. Öveçoglu ◽

T. Y. Huang

Keyword(s):

Grain Size ◽

Ion Implantation ◽

Amorphous Silicon ◽

Nucleation Rate ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.341065 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2260-2266 ◽

Cited By ~ 271

Author(s):

Miltiadis K. Hatalis ◽

David W. Greve

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Characterization of hydrogenation and dehydrogenation of post‐plasma treated low‐pressure chemical‐vapor‐deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.339258 ◽

1987 ◽

Vol 62 (9) ◽

pp. 3740-3746 ◽

Cited By ~ 5

Author(s):

Minoru Nakamura ◽

Toshiyuki Ohno ◽

Nobutake Konishi ◽

Kenji Miyata ◽

Norimasa Kamezawa

Keyword(s):

Amorphous Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon

IEEE Electron Device Letters ◽

10.1109/edl.1987.26590 ◽

1987 ◽

Vol 8 (4) ◽

pp. 168-170 ◽

Cited By ~ 18

Author(s):

W.R. Burger ◽

J.H. Comfort ◽

L.M. Garverick ◽

T.R. Yew ◽

R. Reif

Keyword(s):

Low Temperature ◽

Chemical Vapor ◽

Low Pressure ◽

Bipolar Transistor ◽

Epitaxial Silicon ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Transistor Fabrication

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