An amorphous silicon/silicon‐carbide double barrier structure with 2.66 peak to valley current ratio negative resistance

1992 ◽  
Vol 72 (3) ◽  
pp. 1178-1179 ◽  
Author(s):  
Y. K. Fang ◽  
K. H. Chen ◽  
K. S. Wu ◽  
C. R. Liu ◽  
J. D. Hwang
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Negative Resistance ◽  
Barrier Structure ◽  
Current Ratio ◽  
Double Barrier ◽  
Silicon Silicon ◽  
Double Barrier Structure

Short-wave infrared detector with double barrier structure and low dark current density

2016 ◽  
Vol 14 (2) ◽  
pp. 022501-22505
Author(s):  
Yu Dong Yu Dong ◽  
Guanglong Wang Guanglong Wang ◽  
Haiqiao Ni Haiqiao Ni ◽  
Kangming Pei Kangming Pei ◽  
Zhongtao Qiao Zhongtao Qiao ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
Infrared Detector ◽  
Short Wave ◽  
Barrier Structure ◽  
Dark Current Density ◽  
Double Barrier ◽  
Short Wave Infrared ◽  
Double Barrier Structure

THE WIDTH RATIO OF TWO BARRIERS IN RESONANT TUNNELING

2003 ◽  
Vol 17 (03) ◽  
pp. 105-109 ◽  
Author(s):  
MASATO OHMUKAI
Keyword(s):  
Transmission Coefficient ◽  
Resonant Tunneling ◽  
Width Ratio ◽  
Total Width ◽  
Barrier Width ◽  
Barrier Structure ◽  
Double Barrier ◽  
Two Parameters ◽  
Double Barrier Structure ◽  
Two Barriers

Numerical calculations by a transfer matrix method have been performed to obtain the transmission coefficient of rectangular double barrier structures. The dependence of the well width, barrier width and the barrier height was systematically investigated. When the width ratio of the two barriers was varied on condition that a total width was fixed, the transmission coefficient at a resonance is varied while that at a valley region is not. It is concluded that the resonant tunneling is characterized by two parameters: total width and the width ratio. Our results clarify the transition of transmission spectrum from a single barrier to a double barrier structure.

Sign in / Sign up

Export Citation Format

Share Document