Interband tunneling between valence‐band and conduction‐band quantum wells in a GaSb/AlSb/InAs/AlSb/GaSb/AlSb/InAs triple‐barrier structure

1992 ◽  
Vol 72 (3) ◽  
pp. 960-963 ◽  
Author(s):  
J. F. Chen ◽  
A. Y. Cho
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Barrier Structure ◽  
Interband Tunneling

Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates

1993 ◽  
Vol 48 (11) ◽  
pp. 8102-8118 ◽  
Author(s):  
Mitsuru Sugawara ◽  
Niroh Okazaki ◽  
Takuya Fujii ◽  
Susumu Yamazaki
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Structures ◽  
Inp Substrates

Resonant Zener tunneling of electrons between valence‐band and conduction‐band quantum wells

1987 ◽  
Vol 51 (8) ◽  
pp. 575-577 ◽  
Author(s):  
Jeremy Allam ◽  
Fabio Beltram ◽  
Federico Capasso ◽  
Alfred Y. Cho
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Zener Tunneling

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

THE OPTICAL STARK EFFECT OF THE EXCITON DUE TO DYNAMICAL COUPLING BETWEEN QUANTIZED STATES OF THE ELECTRON AND HOLE IN QUANTUM WELLS

1993 ◽  
Vol 07 (19) ◽  
pp. 3405-3413 ◽  
Author(s):  
NGUYEN HONG QUANG
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Stark Effect ◽  
Photon Absorption ◽  
Pump Field ◽  
Absorption Probability ◽  
Dynamical Coupling ◽  
Optical Stark Effect

Optical Stark effect of the exciton in quantum wells is treated by taking into account not only dynamical coupling by pump field between quantized states of the electron in the conduction band but also the coupling between quantized states of the hole in the valence band. The changes in the calculated one-photon absorption probability by exciton depend essentially on pump field detuning.

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 721-724 ◽  
Author(s):  
T.S. Turner ◽  
P.M. Martin ◽  
L. Eaves ◽  
H.B. Evans ◽  
P.A. Harrison ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Barrier Structure ◽  
Coupled Quantum Wells ◽  
Strongly Coupled

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Sign in / Sign up

Export Citation Format

Share Document