Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition

2010 ◽  
Vol 97 (18) ◽  
pp. 183109 ◽  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
High Quality ◽  
Graphene Films ◽  
Pressure Chemical

Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FD21 ◽  
Author(s):  
Dongheon Lee ◽  
Kihwan Lee ◽  
Saebyuk Jeong ◽  
Juhyun Lee ◽  
Bosik Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Process Optimization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Graphene Films ◽  
Pressure Chemical

scholarly journals Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3112
Author(s):  
Ruinan Wu ◽  
Yueguo Hu ◽  
Peisen Li ◽  
Junping Peng ◽  
Jiafei Hu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Sharp Interface ◽  
Large Area ◽  
Oriented Growth ◽  
High Quality ◽  
Pressure Chemical

The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Growth of large-area atomically thin MoS_2 film via ambient pressure chemical vapor deposition

2015 ◽  
Vol 3 (4) ◽  
pp. 110 ◽  
Author(s):  
Caiyun Chen ◽  
Hong Qiao ◽  
Yunzhou Xue ◽  
Wenzhi Yu ◽  
Jingchao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Large Area ◽  
Pressure Chemical

scholarly journals Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Jisu Jang ◽  
Myungwoo Son ◽  
Sunki Chung ◽  
Kihyeun Kim ◽  
Chunhum Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Graphene Films

scholarly journals Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

2016 ◽  
Vol 138 (47) ◽  
pp. 15488-15496 ◽  
Author(s):  
Zongping Chen ◽  
Wen Zhang ◽  
Carlos-Andres Palma ◽  
Alberto Lodi Rizzini ◽  
Bilu Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Graphene Nanoribbons ◽  
Ambient Pressure ◽  
Chemical Vapor ◽  
Device Integration ◽  
Pressure Chemical
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