scholarly journals The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

2010 ◽  
Vol 97 (18) ◽  
pp. 183505 ◽  
Author(s):  
A. Descoeudres ◽  
L. Barraud ◽  
R. Bartlome ◽  
G. Choong ◽  
Stefaan De Wolf ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Interface Passivation ◽  
Silicon Interface

scholarly journals Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

2011 ◽  
Vol 99 (12) ◽  
pp. 123506 ◽  
Author(s):  
A. Descoeudres ◽  
L. Barraud ◽  
Stefaan De Wolf ◽  
B. Strahm ◽  
D. Lachenal ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Interface Passivation ◽  
Silicon Interface

Annealing induced amorphous/crystalline silicon interface passivation by hydrogen atom diffusion

2015 ◽  
Vol 27 (1) ◽  
pp. 705-710 ◽  
Author(s):  
Xiaowan Dai ◽  
Hongkun Cai ◽  
Dexian Zhang ◽  
Guifeng Chen ◽  
Yong Wang ◽  
...  
Keyword(s):  
Hydrogen Atom ◽  
Crystalline Silicon ◽  
Atom Diffusion ◽  
Interface Passivation ◽  
Silicon Interface

Improved amorphous/crystalline silicon interface passivation with two-step intrinsic layers

RSC Advances ◽  
2014 ◽  
Vol 4 (56) ◽  
pp. 29794-29798 ◽  
Author(s):  
Yuanjian Jiang ◽  
Xiao-dan Zhang ◽  
Fengyou Wang ◽  
Changchun Wei ◽  
Ying Zhao
Keyword(s):  
Crystalline Silicon ◽  
One Step ◽  
Interface Passivation ◽  
Silicon Interface

The implied Voc value of the sample obtained using the two-step i-layers process was much higher than that obtained using the traditional one step i-layer process.

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