Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment

2014 ◽  
Vol 16 (37) ◽  
pp. 20202 ◽  
Author(s):  
Fengyou Wang ◽  
Xiaodan Zhang ◽  
Liguo Wang ◽  
Yuanjian Jiang ◽  
Changchun Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Heterojunction Solar Cells ◽  
Post Annealing ◽  
Interface Passivation ◽  
Silicon Interface

Low Temperature Metal Organic Chemical Vapor Deposition (LTMOCVD) of Electronic Materials

1989 ◽  
Vol 162 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Paul J. Toscano ◽  
Richard B. Rizk ◽  
Victor Tulchinsky ◽  
Alex Greene
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Semiconductor Surface ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposition Techniques

ABSTRACTHigh quality amorphous and crystalline silicon carbide thin films were produced by low temperature metal-organic chemical vapor deposition (LTMOCVD) using the organometallic precursor tetraethynylsilane, Si(C2 H)4. LTMOCVD, which was developed by the present investigators, uses single source precursors containing all the elemental constituents desired in the target material already directly bonded. This approach eliminates the inherent limitations of conventional MOCVD where separate precursors are used for each of the individual components of the desired compound. LTMOCVD thus combines the ability to deposit films at low temperatures, which is characteristic of physical deposition techniques, with the ability to provide complete coverage at steps or irregularities on the semiconductor surface, which is characteristic of chemical deposition techniques. In addition, the precursors employed are non-toxic, non-hazardous and easy to handle. Consequently, LTMOCVD can produce compound semiconductors on thermally fragile or chemically sensitive substrates. The SiC films were grown in a hot-wall CVD reactor at a reactor pressure of 10−6-10−3 torr and substrate temperature in the range 300–700°C. Characterization studies were performed using electron diffraction (ED), Auger electron spectroscopy (AES), Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure– contaminant levels were below the detection limits of the techniques employed.

Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

2011 ◽  
Vol 327 (1) ◽  
pp. 57-62 ◽  
Author(s):  
Yung-Bin Chung ◽  
Hyung-Ki Park ◽  
Dong-Kwon Lee ◽  
Wook Jo ◽  
Jean-Ho Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Low Temperature Deposition ◽  
Temperature Deposition

The Low-Temperature Metal-Organic Chemical Vapor Deposition (Ltmocvd) Route to Amorphous Silicon Semiconductors

1990 ◽  
Vol 192 ◽  
Author(s):  
Aain E. Kaloyeros ◽  
James W. Corbett ◽  
Paul J. Tobcano ◽  
Richard B. Rizk
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTPreliminary results are presented for a new approach proposed by the present investigators to solve the problem of light-induced degradation in amorphous silicon semiconductors. The approach uses low-temperature metal-organic chemical vapor deposition (LTMOCVD) of tailored organometallic precursors. The precursors employed are non-toxic, non-hazardous and easy to handle. In the present paper, a-Si:H films were grown, using argon with various hydrogen concentrations as carrier gas, in a cold-wall CVD reactor at a reactor pressure of 1-10 torr and substrate temperature in the range 300–450°C. Characterization studies were performed using x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and extended electron-energy-loss fine structure spectroscopy (EXELFS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure--contaminant levels were below the detection limits of XPS. In addition, EXELFS results showed that short-range order (SRO), consisting of the same tetrahedral coordinated units found in crystalline silicon, does exist in all the amorphous samples, regardless of hydrogen concentration. However, the degree of stuctural disorder in the silicon local tetrahedral units decreased as hydrogen was added.

Nonclassical Crystallization in Low-Temperature Deposition of Crystalline Silicon by Hot-Wire Chemical Vapor Deposition

2014 ◽  
Vol 14 (12) ◽  
pp. 6239-6247 ◽  
Author(s):  
Seung-Wan Yoo ◽  
Ju-Seop Hong ◽  
Sung-Soo Lee ◽  
Chan-Soo Kim ◽  
Tae-Sung Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Low Temperature Deposition ◽  
Temperature Deposition

scholarly journals A Phase Diagram for Morphology and Properties of Low Temperature Deposited Polycrystalline Silicon Grown by Hot-wire Chemical Vapor Deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Christine E. Richardson ◽  
Maribeth S. Mason ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
High Energy ◽  
Hot Wire

ABSTRACTThe fabrication of low temperature polycrystalline silicon with lifetimes close to single crystalline silicon, but with internal surface passivation similar to that observed in deposited microcrystalline silicon, is a promising direction for thin film polycrystalline silicon photovoltaics. To achieve this, large grains with passivated grain boundaries and intragranular defects are required. We investigate the low-temperature (250-550°C) epitaxial growth of thin silicon films by hot-wire chemical vapor deposition (HWCVD) on Si(100) substrates and large-grained polycrystalline silicon template layers formed by selective nucleation and solid phase epitaxy (SNSPE). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have observed epitaxial, twinned epitaxial, mixed epitaxial/polycrystalline and polycrystalline phases in the 50 nm–15 μm thickness regime. HWCVD growth on Si(100) was performed using a mixture of diluted silane (4% in He) and hydrogen at a H2/SiH4 ratio of 50:1 at substrate temperatures from 300–475°C. We will discuss the relationship between the microstructure and photoconductive decay lifetimes of these undoped layers on Si(100) and SNSPE templates as well as their suitability for use in thin-film photovoltaic applications.

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