Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries

2010 ◽  
Vol 108 (10) ◽  
pp. 103721 ◽  
Author(s):  
B. Nasr ◽  
S. Dasgupta ◽  
D. Wang ◽  
N. Mechau ◽  
R. Kruk ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Grain Boundaries ◽  
Oxide Films ◽  
Al Content ◽  
Zinc Oxide Films

Electrical resistivity and photoluminescence of zinc oxide films prepared by ultrasonic spray pyrolysis

2009 ◽  
Vol 206 (1) ◽  
pp. 106-115 ◽  
Author(s):  
Khedidja Bouzid ◽  
Abdelkader Djelloul ◽  
Noureddine Bouzid ◽  
Jamal Bougdira
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Ultrasonic Spray Pyrolysis ◽  
Ultrasonic Spray ◽  
Zinc Oxide Films

Degradation of the Acousto-Electric Current Saturation Behavior in C-Axis Fiber-Textured Polycrystalline Zinc Oxide Films

1996 ◽  
Vol 426 ◽  
Author(s):  
T. Pompe ◽  
V. Srikant ◽  
D. R. Clarke
Keyword(s):  
Zinc Oxide ◽  
Electric Field ◽  
Grain Boundaries ◽  
Electric Current ◽  
Current Density ◽  
Oxide Films ◽  
Constant Field ◽  
Zinc Oxide Films ◽  
Current Saturation ◽  
A Current

AbstractAcousto-electric current saturation has been observed in thin, polycrystalline Al-doped zinc oxide films grown on fused quartz. The films, grown by laser ablation, are c-axis textured with high angle grain boundaries between the grains. After annealing at 600°C in 0.1 mtorr oxygen, the films exhibit a current saturation at a current density of 2 105 A/cm2 and electric fields of 5 103 V/cm. However, under constant field the current density falls and the current saturation behavior is not maintained. Current saturation at the same current density can, however, be restored by increasing the electric field. Similarly, the appearance and disappearance of the current saturation behavior can be reversibly controlled by annealing in different oxygen partial pressures at 200°C. The degradation phenomena is attributed to the high acoustic flux enhancing the diffusion of oxygen along the grain boundaries where oxygen can alter the grain boundary potential barrier and hence the electric field in the grains.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Properties of Transparent Conductive Zinc Oxide Films Deposited on COP Substrates by PLD Method

2009 ◽  
Vol 129 (11) ◽  
pp. 1981-1984
Author(s):  
Yuki Ueno ◽  
Takanori Aoki ◽  
Akio Suzuki ◽  
Tatsuhiko Matsushita ◽  
Masahiro Okuda
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
Zinc Oxide Films

Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Oxide Films ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zinc Oxide Film ◽  
Incident Wavelength ◽  
Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

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