Electrical resistivity and photoluminescence of zinc oxide films prepared by ultrasonic spray pyrolysis

2009 ◽  
Vol 206 (1) ◽  
pp. 106-115 ◽  
Author(s):  
Khedidja Bouzid ◽  
Abdelkader Djelloul ◽  
Noureddine Bouzid ◽  
Jamal Bougdira
Keyword(s):  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Ultrasonic Spray Pyrolysis ◽  
Ultrasonic Spray ◽  
Zinc Oxide Films

Preparation of Titanium-doped Indium Oxide Films by Ultrasonic Spray Pyrolysis Method

2013 ◽  
Vol 454 (1) ◽  
pp. 63-69
Author(s):  
Surapong Panyata ◽  
Sukum Eitssayeam ◽  
Gobwut Rujijanagul ◽  
Tawee Tunkasiri ◽  
Sumnuk Sirisoonthorn ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Indium Oxide ◽  
Oxide Films ◽  
Ultrasonic Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Ultrasonic Spray ◽  
Pyrolysis Method ◽  
Indium Oxide Films ◽  
Ultrasonic Spray Pyrolysis Method

Morphological, Structural, Electrical and Optical Properties of Copper-Doped Zinc Oxide Films Deposited by Spray Pyrolysis

2018 ◽  
Vol 930 ◽  
pp. 79-84
Author(s):  
Juliana Simões Chagas Licurgo ◽  
Herval Ramos Paes Junior
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Material Behavior ◽  
Glass Substrates ◽  
Zinc Oxide Films

In this work, copper-doped zinc oxide films (ZnO:Cu) were deposited by spray pyrolysis on glass substrates. The influence of doping concentration (0-10 at.%) on morphological, structural, optical and electrical properties of the ZnO:Cu films was investigated. Electrical characterization consisted in measuring the variation of electrical conductivity with temperature; they presented a typical semiconductor material behavior. Based on x-ray diffraction (XRD) analysis, it was able to confirm that the films are polycrystalline having a wurtzite hexagonal structure, preferentially oriented in the c-axis (002), and the crystallite size ranged from 41.60 to 50.70 nm. The optical characterization revealed that ZnO:Cu films present band gap energy between 3.18 and 3.27 eV. The films were homogeneous with good adhesion to the substrate. The results indicate the viability of using them in optoelectronic devices.

scholarly journals Characterization and thermoluminescence study of gamma irradiated Tb-doped ZnO and undoped ZnO synthesized by spray pyrolysis method

Nova Scientia ◽  
2021 ◽  
Vol 13 (27) ◽  
Author(s):  
Alejandro Ortiz-Morales ◽  
Manuel García-Hipólito ◽  
Epifanio Cruz-Zaragoza ◽  
Ramón Gómez-Aguilar
Keyword(s):  
Zinc Oxide ◽  
Gamma Radiation ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Spray Pyrolysis Method ◽  
Order Kinetic ◽  
Zinc Oxide Films ◽  
Pyrolysis Method ◽  
Wide Range ◽  
Doped Zno

High gamma dose-resistant undoped ZnO and Tb-doped ZnO thermoluminescent (TL) micro-phosphors were prepared by the spray pyrolysis method. Scanning electron microscopy shows crystalline rods with hexagonal morphology, (0.1-0.4 µm diameter, and about 1 µm length). Raman spectra dispersion reveals a würtzite form. Photoluminescence (PL) study of irradiated zinc oxide films indicates the generation of defects produced by gamma irradiation resulting in an increased probability of electron-hole exciton recombination. PL spectrum shows emission bands from 5D4-7Fj=6,5,4,3 transitions ascribed to Tb3+ dopant in zinc oxide phosphor. X-ray diffraction patterns for both types of films growth (undoped ZnO and Tb-doped ZnO) are typical of zinc oxide crystalline structure, with no noticeable effect of Tb ions. Dosimetric properties, for both samples, show a low TL fading signal and TL reproducibility signal for undoped ZnO and Tb-doped ZnO samples was 29 and 57 %, respectively. The kinetic parameters such as activation energy E, frequency factor s, and Rm values, were obtained by Computerized Glow Curve Deconvolution (CGCD) assuming Mixed Order Kinetic model (MOK). The results show that the MOK well described the glow curves of zinc oxide films. The heating rate effects produced a broadening of glow peak located at 420 K. For purposes like radiation detector, atomic effective number (Zeff) was obtained: 27.74 and 56.47 for undoped ZnO and Tb-doped ZnO samples, respectively. The samples were exposed to gamma radiation in a wide range of 0.25–20 kGy dose. TL properties of undoped ZnO and Tb-doped ZnO samples show that these materials could be used to detect high doses in a gamma radiation field.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

2011 ◽  
Vol 20 (3) ◽  
pp. 037306 ◽  
Author(s):  
Bao-Chen Jiao ◽  
Xiao-Dan Zhang ◽  
Chang-Chun Wei ◽  
Jian Sun ◽  
Jian Ni ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Solar Cell ◽  
Spray Pyrolysis ◽  
Double Layer ◽  
Thin Film Solar Cell ◽  
Ultrasonic Spray Pyrolysis ◽  
Silicon Thin Film ◽  
Ultrasonic Spray
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