Degradation of the Acousto-Electric Current Saturation Behavior in C-Axis Fiber-Textured Polycrystalline Zinc Oxide Films

1996 ◽  
Vol 426 ◽  
Author(s):  
T. Pompe ◽  
V. Srikant ◽  
D. R. Clarke

AbstractAcousto-electric current saturation has been observed in thin, polycrystalline Al-doped zinc oxide films grown on fused quartz. The films, grown by laser ablation, are c-axis textured with high angle grain boundaries between the grains. After annealing at 600°C in 0.1 mtorr oxygen, the films exhibit a current saturation at a current density of 2 105 A/cm2 and electric fields of 5 103 V/cm. However, under constant field the current density falls and the current saturation behavior is not maintained. Current saturation at the same current density can, however, be restored by increasing the electric field. Similarly, the appearance and disappearance of the current saturation behavior can be reversibly controlled by annealing in different oxygen partial pressures at 200°C. The degradation phenomena is attributed to the high acoustic flux enhancing the diffusion of oxygen along the grain boundaries where oxygen can alter the grain boundary potential barrier and hence the electric field in the grains.

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (2) ◽  
pp. 37-44
Author(s):  
K. O. Yanushkevich ◽  
E. B. Chubenko ◽  
V. P. Bondarenko

This paper is targeted at studying the patterns of deposition by electrochemical method of Ni-doped ZnO films, including registering and analyzing their photoluminescence and Raman scattering spectra. We have studied the electrochemical deposition of nickel-doped zinc oxide films on single-crystal silicon substrates from aqueous solutions of zinc and nickel nitrates. The deposition was conducted from aqua solutions of Zn and Ni nitrates in a standard double-electrode electrochemical cell in galvanostatic mode with the current density from 5 to 20 mA/cm2 and deposition time from 5 to 30 min. The Raman scattering on nickel-doped zinc oxide films was examined via laser Raman spectrometer SOL Instruments Confotec NR500. The analysis of Raman spectra showed that an increase of cathodic current density deposition leads to an enhanced concentration of a doping agent in the films. Photoluminescence spectra of the samples were registered on a laser spectral measuring system based on monochromator-spectrograph SOLAR TII MS 7504i where a monochromatic line with the 345-nm wavelength, which was extracted from the spectrum of Xe-lamp by means of double monochromator Solar TII DM160, was used as the excitation source. The research demonstrates that the emmission intensity increases with the thickness of the deposited film, and the position of maximums of the radiation line remains unchanged in a visible wavelength range and on photoluminescence spectra with fixed current density. The change in the density of the cathode current leads to a shift in the position of the photoluminescence spectra maximum, which indicates restructuring of defects and dopant atoms in the doped semiconductor, which in turn changes the position of the corresponding levels in the band gap of the material.


2015 ◽  
Vol 24 (1) ◽  
pp. 74-82 ◽  
Author(s):  
Sanjay Kumar Swami ◽  
Neha Chaturvedi ◽  
Anuj Kumar ◽  
Viresh Dutta

Author(s):  
T. A. Emma ◽  
M. P. Singh

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.


2009 ◽  
Vol 129 (11) ◽  
pp. 1981-1984
Author(s):  
Yuki Ueno ◽  
Takanori Aoki ◽  
Akio Suzuki ◽  
Tatsuhiko Matsushita ◽  
Masahiro Okuda

2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.


Sign in / Sign up

Export Citation Format

Share Document