Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by spectroscopic ellipsometry using different optical models

1992 ◽  
Vol 71 (6) ◽  
pp. 2835-2843 ◽  
Author(s):  
M. Fried ◽  
T. Lohner ◽  
W. A. M. Aarnink ◽  
L. J. Hanekamp ◽  
A. van Silfhout
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Depth Profiles ◽  
Nondestructive Determination ◽  
Damage Depth ◽  
Ion Implanted

Damage depth profiles for high energy ion implanted silicon

1993 ◽  
pp. 191-196 ◽  
Author(s):  
Tohru Hara ◽  
Takeshi Muraki ◽  
Masataka Sakurai ◽  
Satoru Takeda ◽  
Morio Inoue ◽  
...  
Keyword(s):  
High Energy ◽  
Depth Profiles ◽  
Damage Depth ◽  
Ion Implanted

Damage depth profiles for high energy ion implanted silicon

1993 ◽  
Vol 74 (1-2) ◽  
pp. 191-196 ◽  
Author(s):  
Tohru Hara ◽  
Takeshi Muraki ◽  
Masataka Sakurai ◽  
Satoru Takeda ◽  
Inoue Morio ◽  
...  
Keyword(s):  
High Energy ◽  
Depth Profiles ◽  
Damage Depth ◽  
Ion Implanted

Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry

2003 ◽  
Vol 195 (1) ◽  
pp. 277-281 ◽  
Author(s):  
E. R. Shaaban ◽  
T. Lohner ◽  
P. Petrik ◽  
N. Q. Khánh ◽  
M. Fried ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Complex Dielectric Function ◽  
Amorphous Sic ◽  
Ion Implanted
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