Nondestructive determination of damage depth profiles in ion‐implanted semiconductors by multiple‐angle‐of‐incidence single‐wavelength ellipsometry using different optical models

1992 ◽  
Vol 72 (6) ◽  
pp. 2197-2201 ◽  
Author(s):  
M. Fried ◽  
T. Lohner ◽  
E. Jároli ◽  
N. Q. Khanh ◽  
C. Hajdu ◽  
...  
Keyword(s):  
Angle Of Incidence ◽  
Depth Profiles ◽  
Nondestructive Determination ◽  
Damage Depth ◽  
Ion Implanted

Damage depth profiles for high energy ion implanted silicon

1993 ◽  
pp. 191-196 ◽  
Author(s):  
Tohru Hara ◽  
Takeshi Muraki ◽  
Masataka Sakurai ◽  
Satoru Takeda ◽  
Morio Inoue ◽  
...  
Keyword(s):  
High Energy ◽  
Depth Profiles ◽  
Damage Depth ◽  
Ion Implanted

Damage depth profiles for high energy ion implanted silicon

1993 ◽  
Vol 74 (1-2) ◽  
pp. 191-196 ◽  
Author(s):  
Tohru Hara ◽  
Takeshi Muraki ◽  
Masataka Sakurai ◽  
Satoru Takeda ◽  
Inoue Morio ◽  
...  
Keyword(s):  
High Energy ◽  
Depth Profiles ◽  
Damage Depth ◽  
Ion Implanted

scholarly journals Application of Nuclear Techniques to the Investigation of the Oxidation Behavior of Ion-Implanted Steels

2019 ◽  
Vol 7 ◽  
pp. 222
Author(s):  
F. Noli ◽  
P. Misaelides
Keyword(s):  
Nuclear Reaction ◽  
Oxidation Behavior ◽  
Depth Distribution ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Aluminum Concentration ◽  
Near Surface ◽  
Depth Profiles ◽  
Ion Implanted

The oxidation behavior of ion-implanted steel samples in air, using Nuclear Reaction Analysis (NRA) and Rutherford Backscattering Spectroscopy (RBS) techniques. Austenitic stainless steel AISI 321 (Fe/Crl8/Ni8/Mn2/Ti) samples implanted with magnesium-, aluminum- and zirconium-ions (implantation energy 40 keV, dose: 1-1017 to 2-1017 ions/cm2) were oxidized in air in the temperature region 450-650 °C for several periods of time. The above implants were selected on the basis of the affinity to oxygen, as well as their ability to form protective oxides as MgO, AI2O3, Zr02 in order to improve the oxidation resistance of steel. The determination of the oxygen concentration and depth-profiles was performed by means of the 160(d, p)170 nuclear reaction. Rutherford Backscattering Spectroscopy was applied to investigate the near-surface layers and to determine the depth profiles of the implanted ions. The determination of the aluminum concentration and the depth distribution of the Al-ions was performed using the resonance at 992 keV of the 27Al(p, 7)28Si nuclear reaction whereas the concentration and the depth distribution of the Mg-ions by the means of the 24Mg(o;, p)27Al reaction. The excitation function of the 24Mg(a:, p)27Al nuclear reaction was studied in the energy region 4600-5000 keV and absolute cross section data allowing the determination of the Mg-profile were determined for this purpose.

scholarly journals RaDMaX: a graphical program for the determination of strain and damage profiles in irradiated crystals

2016 ◽  
Vol 49 (1) ◽  
pp. 311-316 ◽  
Author(s):  
M. Souilah ◽  
A. Boulle ◽  
A. Debelle
Keyword(s):  
Spline Functions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Depth Profiles ◽  
Diffraction Model ◽  
Calculated Curve ◽  
Fitting Procedures ◽  
Damage Depth ◽  
User Friendly

RaDMaX(radiation damage in materials analysed with X-ray diffraction) is a user-friendly graphical program that allows the determination of strain and damage depth profiles in ion-irradiated crystals. This task is achieved by fitting experimental X-ray diffraction data, recorded in symmetrical θ–2θ geometry, with a dynamical diffraction model parametrized with variable strain and damage profiles based onB-spline functions. The strain and damage profiles can be graphically manipulated so as to fit the calculated curve to the experimental data. Automatic fitting procedures (generalized simulated annealing and conventional least squares) are also implemented.RaDMaXis free and open source (CeCILL licence) and can be downloaded from http://aboulle.github.io/RaDMaX.

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